APTM50H10FT3G

Overview

The APTM50H10FT3G is a silicon-based N-Channel MOSFET module from the POWER MOS 7 family, configured as a single full bridge. It features a SP3 package with screw mount installation. Key electrical parameters include a drain-source breakdown voltage of 500 V and a continuous drain current of 37 A at 25°C. The maximum on-resistance is 120 mOhms at 18.5 A and 10 V gate drive. The device supports a gate-source voltage range of -30 V to +30 V, with a threshold voltage of 5 V at 1 mA. Maximum power dissipation is rated at 312 W, and it operates within a junction temperature range of -40°C to +150°C.

Feature Summary

• Integrated full bridge configuration combining four N-channel MOSFETs in a single module for simplified circuit design.
• POWER MOS 7 technology providing optimized switching performance and low conduction losses.
• Robust thermal management capabilities with high power dissipation rating suitable for baseplate mounting.
• Wide operating temperature range ensuring reliability in demanding industrial environments.

Applications

• High-frequency DC-DC converters
• Motor control drives
• Uninterruptible power supplies (UPS)
• Induction heating systems

Procurement Notes

Verify the specific suffix FT3G against official Microchip documentation to confirm package type and pinout compatibility. Ensure the ordering part number matches the required SP3 configuration. Cross-reference datasheet revisions to confirm electrical characteristics remain unchanged. Confirm RoHS compliance status if required by your manufacturing process. Validate that the supplier provides genuine Microchip Technology products with traceable origin.

Selection Notes

Select this module when a compact full bridge solution is needed for medium-power applications. The 500 V rating suits general industrial power conversion. Consider the 37 A current capability relative to your thermal design constraints. The SP3 package requires appropriate heatsinking infrastructure. Verify gate drive requirements align with the specified threshold and charge characteristics.

Part Context

This component belongs to the APTM50 series of discrete semiconductor modules manufactured by Microchip Technology. It utilizes silicon technology and falls under the MOSFET array category. The module integrates multiple transistors to reduce board space and interconnection parasitics compared to discrete implementations.

Replacement Considerations

Direct replacements must match the SP3 package, 500 V rating, and full bridge configuration. Compare on-resistance and current ratings carefully. Verify pinout compatibility before substitution. Consult Microchip for updated alternatives if the current part is obsolete.

FAQ

What is the maximum power dissipation of the APTM50H10FT3G?

The maximum power dissipation is 312 W.

Is the APTM50H10FT3G available in a surface-mount package?

No, it uses a screw mount SP3 package designed for baseplate installation.

What is the typical gate-source threshold voltage?

The maximum gate-source threshold voltage is 5 V at 1 mA drain current.