APTM50H15FT1G

Overview

The APTM50H15FT1G is a Power MOS 8 Ultrafast FREDFET Full-Bridge MOSFET module manufactured by Microchip Technology. It features an N-Channel configuration with a Drain-Source Breakdown Voltage (VDSS) of 500 V and a typical Drain-Source ON Resistance (RDSon) of 150 mΩ at Tj = 25°C. The continuous drain current (ID) is rated at 25 A at Tc = 25°C, with a maximum power dissipation (PD) of 208 W at Tc = 25°C. The device utilizes the SP1 package for screw mounting and includes an internal NTC thermistor for temperature monitoring.

Feature Summary

• Power MOS 8 Ultrafast FREDFET technology providing low RDSon, low input and Miller capacitance, and low gate charge.
• Ultrafast intrinsic reverse diode characteristics with avalanche energy rating and rugged performance.
• Very low stray inductance achieved through symmetrical design.
• Internal NTC thermistor integrated for precise temperature monitoring.

Applications

• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control

Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to confirm exact electrical tolerances and packaging variations. Ensure compatibility with SP1 mounting requirements and torque specifications during integration. Cross-reference datasheet revisions to validate thermal resistance values and absolute maximum ratings prior to final procurement decisions.

Selection Notes

Select this component for high-frequency applications requiring low switching losses and robust reverse recovery characteristics. Consider the 500V voltage rating and 25A current capability relative to system load requirements. Evaluate the isolated package benefits for direct heatsink mounting and the integrated thermistor for simplified thermal management in compact designs.

Part Context

This module belongs to the Power MOS 8 family, designed for high-efficiency power conversion. It integrates four N-channel MOSFETs in a full-bridge topology within a single SP1 package. The design emphasizes low profile construction and easy PCB mounting with solderable terminals for both power and signal connections.

Replacement Considerations

APTM50H15UT1G

FAQ

What is the function of the internal thermistor?

The internal NTC thermistor provides temperature monitoring capabilities for the module, allowing for precise thermal management and protection.

How does the symmetrical design benefit the module?

The symmetrical design contributes to very low stray inductance, which enhances performance during high-frequency switching operations.

Is the module rated for avalanche energy?

Yes, the Power MOS 8 Ultrafast FREDFETs are avalanche energy rated, ensuring rugged performance under transient conditions.