APTM50HM35FG

APTM50HM35FG

$231.28
  • Description:MOSFET 4N-CH 500V 99A SP6
  • Series:-

SKU:7804855682f4 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET 4N-CH 500V 99A SP6
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:4 N-Channel (Full Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):500V
  • Current - Continuous Drain (Id) @ 25°C:99A
  • Rds On (Max) @ Id, Vgs:39mOhm @ 49.5A, 10V
  • Vgs(th) (Max) @ Id:5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs:280nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:14000pF @ 25V
  • Power - Max:781W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP6
  • Supplier Device Package:SP6
  • Grade:-
  • Qualification:-

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APTM50HM35FG

Overview

The APTM50HM35FG is a high-power N-channel MOSFET module manufactured by Microchip Technology. It utilizes FREDFET silicon technology and features an H-bridge topology within the SP6C package. The device supports electrical mounting via FASTON connectors and screws. Key specifications include a drain-source voltage of 500V, a typical on-state resistance of 35 milliohms at 25°C, and a continuous current rating of 70A at a case temperature of 80°C.

Feature Summary

  • Integrates two N-channel FREDFET devices in a single H-bridge configuration for efficient power switching.
  • Utilizes advanced silicon technology to optimize switching performance and thermal management.
  • Designed for robust industrial applications requiring high voltage and current handling capabilities.

Applications

  • Industrial motor drives
  • Power supply systems
  • Inverter circuits

Procurement Notes

Verify the specific ordering suffix to ensure compatibility with required packaging and tape-and-reel options. Confirm that the SP6C package dimensions align with the target PCB footprint or heatsink interface. Check for any recent product change notifications regarding material composition or manufacturing site updates before finalizing procurement plans.

Selection Notes

Select this component when an integrated H-bridge solution is preferred over discrete MOSFETs to reduce board space and simplify layout. Ensure the thermal design can handle the specified power dissipation at the intended operating case temperature. Consider the gate charge requirements relative to the driving circuit's capability to achieve optimal switching speeds.

Part Context

This module belongs to Microchip's POWER MOS 7 series, which focuses on improving figure-of-merit metrics for power conversion. The SP6C package provides a standardized form factor for screw-mounting, facilitating integration into larger power assemblies compared to surface-mount alternatives.

Replacement Considerations

Direct replacements are limited due to the specific H-bridge topology and package constraints. Evaluate other SP6C modules from the same manufacturer if pinout compatibility is critical. Verify that alternative parts meet or exceed the 500V breakdown voltage and 35mΩ resistance requirements.

APTM50HM35FGAPTM50HM35FG
$231.28
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