APTM50HM65FT3G

APTM50HM65FT3G

$137.98
  • Description:MOSFET 4N-CH 500V 51A SP3
  • Series:-

SKU:b51eb5242308 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 4N-CH 500V 51A SP3
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:4 N-Channel (Full Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):500V
  • Current - Continuous Drain (Id) @ 25°C:51A
  • Rds On (Max) @ Id, Vgs:78mOhm @ 25.5A, 10V
  • Vgs(th) (Max) @ Id:5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs:140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:7000pF @ 25V
  • Power - Max:390W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP3
  • Supplier Device Package:SP3
  • Grade:-
  • Qualification:-

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APTM50HM65FT3G

Overview

The APTM50HM65FT3G is a silicon-based MOSFET module manufactured by Microchip Technology. It features a full bridge configuration integrating PM-MOSFET and FREDFET technologies within the SP3F package. The device supports screw mount installation and operates within a temperature range of -40°C to +125°C. Key electrical specifications include a gate-source voltage limit of ±30 V.

Feature Summary

  • Integrates Power MOSFET and Fast Recovery Freewheeling Diode technologies in a single module
  • Utilizes the SP3F package for robust mechanical mounting
  • Designed for high-temperature operation up to 125°C

Applications

  • Industrial motor drives
  • Power supply inverters
  • High-frequency switching applications

Procurement Notes

Verify the specific datasheet revision and compliance documentation directly with Microchip Technology or authorized distributors before procurement. Confirm that the SP3F package dimensions and pinout match the target design requirements. Ensure thermal management solutions are compatible with the module's screw mount interface and power dissipation characteristics.

Selection Notes

Select this component when a compact full bridge solution combining MOSFETs and fast recovery diodes is required. The SP3F package offers a balance of current handling and thermal performance for industrial applications. Consider the ±30 V gate drive requirement and the -40°C to +125°C operating range during circuit design.

Part Context

This part belongs to the APTM50HM65FT series, which utilizes Microchip's POWER MOS 7 technology. The series is designed for efficient power conversion in demanding environments. The integration of PM-MOSFET and FREDFET reduces component count and board space compared to discrete solutions.

APTM50HM65FT3GAPTM50HM65FT3G
$137.98
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