APTM50HM75STG

Overview

The APTM50HM75SCTG is a Silicon Carbide (SiC) MOSFET module manufactured by Microchip Technology. It features a four-channel N-configuration arranged in a full-bridge topology within an SP4 base-mounted package. The device supports a drain-source voltage of 500V and delivers a continuous drain current of 46A at 25°C. Key electrical parameters include a maximum on-resistance of 90 milliohms at 10V gate drive, a gate charge of 123nC, and an input capacitance of 5590pF. It handles up to 357W of power dissipation and operates between -40°C and 150°C junction temperature.

Feature Summary

• Utilizes Silicon Carbide (SiC) technology for superior thermal conductivity and switching performance compared to traditional silicon devices.
• Integrates four N-channel MOSFETs into a single full-bridge configuration for compact system design.
• Features a robust base-mount SP4 package designed for efficient heat transfer and secure mechanical installation.

Applications

• High-frequency AC/DC and DC/DC power conversion systems
• Industrial motor drives and inverters
• Uninterruptible Power Supplies (UPS)
• Solar micro-inverters and string inverters

Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to confirm exact packaging and revision status. Confirm that the required gate drive voltage aligns with the specified 10V threshold for optimal Rds(on) performance. Ensure the application environment stays within the stated -40°C to 150°C junction temperature range to maintain reliability.

Selection Notes

Select this component when high efficiency and thermal management are critical due to its SiC construction. The integrated full-bridge layout reduces board space compared to discrete solutions. Verify that the 46A current rating and 500V blocking capability meet the peak operational demands of the target circuit without exceeding the 357W power dissipation limit under worst-case conditions.

Part Context

This module belongs to the APTM50 series of power modules from Microchip Technology. It represents a shift toward wide-bandgap semiconductors in industrial power applications. The SP4 package provides a standardized footprint for mounting multiple power devices, facilitating easier integration into existing converter topologies that require isolated or semi-isolated bridge configurations.

Replacement Considerations

Direct replacements must match the 500V rating, 46A current capacity, and SP4 package form factor. Verify that any substitute also utilizes SiC technology if high-frequency operation is required. Cross-reference pinouts and thermal pad dimensions to ensure mechanical compatibility with the existing heatsink assembly.

FAQ

What semiconductor material is used in the APTM50HM75SCTG?

The device is constructed using Silicon Carbide (SiC) technology.

How many channels are integrated in this module?

It contains four N-channel MOSFETs configured as a full bridge.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150°C.