APTM60A11FT1G

APTM60A11FT1G

$49.47
  • Description:MOSFET 2N-CH 600V 40A SP1
  • Series:-

SKU:7d067104ece0 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 600V 40A SP1
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Half Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):600V
  • Current - Continuous Drain (Id) @ 25°C:40A
  • Rds On (Max) @ Id, Vgs:132mOhm @ 33A, 10V
  • Vgs(th) (Max) @ Id:5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs:330nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:10552pF @ 25V
  • Power - Max:390W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP1
  • Supplier Device Package:SP1
  • Grade:-
  • Qualification:-

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APTM60A11FT1G

Overview

The APTM60A11FT1G is a MOSFET Power Module from Microchip Technology, featuring a Phase Leg configuration with VDSS of 600V and RDSon typ 110mΩ at Tj=25°C. It supports ID of 40A @ Tc=25°C and IDM of 245A. The module includes an internal NTC thermistor (R25=50kΩ) for temperature monitoring. Electrical characteristics include VGS(th) 3-5V, Qg 330nC, and switching times Td(on) 75ns, Tr 85ns, Td(off) 225ns, Tf 70ns. Thermal resistance RthJC is 0.32°C/W, with VISOL 2500Vrms.

Feature Summary

  • Power MOS 8 Ultrafast FREDFET technology providing low RDSon, low input/Miller capacitance, and low gate charge.
  • Ultrafast intrinsic reverse diode with avalanche energy rating and very rugged design.
  • Very low stray inductance achieved through symmetrical phase leg design.
  • Internal NTC thermistor integrated for precise junction temperature monitoring.

Applications

  • Welding converters
  • Switched Mode Power Supplies
  • Uninterruptible Power Supplies
  • Motor control

Procurement Notes

Verify the exact part number suffix against official documentation, as variations like UT1G may exist. Confirm RoHS compliance status and specific package revisions via the manufacturer datasheet. Ensure handling procedures for Electrostatic Discharge are followed during procurement and assembly to prevent device sensitivity damage.

Selection Notes

Select this module for high-frequency applications requiring low stray inductance and fast switching speeds. Consider the 600V breakdown voltage and 40A continuous current rating for appropriate thermal management. The isolated SP1 package allows direct heatsink mounting. Verify gate drive requirements align with the specified threshold and charge parameters.

Part Context

This component belongs to the Microchip Technology MOSFET Power Module family, specifically utilizing the Power MOS 8 technology. It is designed as a phase leg module, integrating two switches and associated diodes in a single package. The product line emphasizes high integration and ruggedness for demanding power electronics environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.

FAQ

What is the function of the internal thermistor?

The internal NTC thermistor provides temperature monitoring capabilities, allowing for precise tracking of the junction temperature during operation.

How is the phase leg configured electrically?

Pins 1/2, 3/4, and 5/6 must be shorted together to configure the phase leg properly within the circuit.

What is the maximum isolation voltage?

The RMS isolation voltage between any terminal and the case is 2500Vrms when tested for 1 minute with isolation current less than 1mA at 50/60Hz.

APTM60A11FT1GAPTM60A11FT1G
$49.47
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