APTMC120AM09CT3AG

Overview

The APTMC120AM09CT3AG is a discrete semiconductor module manufactured by Microchip Technology, utilizing Silicon Carbide (SiC) technology. It features a dual common emitter configuration housed in an SP3F press-fit package. The module integrates N-channel MOSFETs and SiC Schottky Barrier Diodes (SBD). Key electrical parameters include a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 220 A. The device operates within a temperature range of -40°C to +175°C and has a power dissipation rating of 576 W.

Feature Summary

• Integrates high-voltage SiC MOSFETs with complementary SiC Schottky Barrier Diodes for efficient switching.
• Utilizes an SP3F press-fit mounting style designed for robust mechanical connection and thermal performance.
• Engineered for high-temperature operation up to 175°C junction temperature.

Applications

• High-frequency motor drives
• Industrial power supplies
• Uninterruptible power systems

Procurement Notes

Verify the specific suffix CT3AG against official Microchip documentation to confirm the exact pinout and thermal characteristics, as variations exist within the APTMC series. Confirm availability status directly with authorized distributors, as this component may be subject to discontinuation or supply constraints. Ensure that the receiving facility is equipped for press-fit installation methods compatible with the SP3F package geometry.

Selection Notes

Select this module when applications require high blocking voltage combined with low switching losses at elevated temperatures. The integrated SBD eliminates body diode reverse recovery issues inherent in silicon IGBTs. Consider the SP3F form factor for space-constrained designs requiring direct PCB mounting without additional hardware. Validate thermal management solutions to maintain junction temperatures within the specified 175°C limit under peak load conditions.

Part Context

This part belongs to the APTMC family of advanced power modules from Microchip Technology, formerly Micrel. These modules are designed to replace traditional silicon-based discrete assemblies, offering higher efficiency and power density. The APTMC series specifically targets applications demanding reliable operation in harsh environments with high voltage and current requirements.

Replacement Considerations

Direct replacements must match the 1.2 kV rating, 220 A current capacity, and SP3F package dimensions. Verify compatibility with existing gate drive voltages and thermal interface materials. Cross-reference datasheets for any differences in switching times or thermal resistance values between potential substitute parts.