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The APTMC120HM17CT3AG is a silicon carbide (SiC) power module manufactured by Microchip Technology. It features a quad configuration housed in an SP3F package with press-in PCB mounting. The device integrates SiC MOSFETs and diodes rated for 1.2 kV blocking voltage. Key electrical parameters include a continuous drain current of 116 A, a maximum gate-source voltage of ±25 V, and a fall time of 30 ns. The module supports operation within a temperature range of -40°C to +125°C.
Verify the specific suffix 'T3AG' against official Microchip documentation to confirm the exact pinout and thermal characteristics associated with the SP3F press-fit variant. Ensure that the procurement channel provides valid RoHS compliance certificates. Cross-reference the datasheet revision history to confirm the active lifecycle status before finalizing orders.
Select this component when designing circuits requiring high-voltage isolation and low switching losses. The quad configuration allows for efficient bridge leg implementation. Verify that the system's thermal management solution can handle the specified power dissipation limits at the intended operating frequency and ambient temperature conditions.
This module belongs to Microchip's discrete semiconductor portfolio, specifically targeting high-power density applications. It complements other IGBT and SiC modules like the APTGX series by offering faster switching speeds. The SP3F packaging standard ensures compatibility with common industrial mounting infrastructure.
Direct substitutes are not explicitly listed in public documentation. Engineers may consider the APTMC120TAM17CTPAG for similar specifications, though it utilizes tube packaging rather than press-fit. Always validate pin compatibility and thermal resistance values before swapping components.