APTMC120HR11CT3AG

APTMC120HR11CT3AG

  • Description:MOSFET 2N-CH 1200V 26A SP3
  • Series:-

SKU:d298103aa658 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 1200V 26A SP3
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:Silicon Carbide (SiC)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:26A (Tc)
  • Rds On (Max) @ Id, Vgs:98mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id:3V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs:62nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds:950pF @ 1000V
  • Power - Max:125W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:SP3
  • Grade:-
  • Qualification:-

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APTMC120HR11CT3AG

Overview

The APTMC120HR11CT3AG is a silicon carbide (SiC) power module manufactured by Microchip Technology. It features a dual common emitter configuration housed in an SP3F package. The device supports a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 20 A at 25 °C. It operates within a temperature range of -40 °C to +125 °C and utilizes press-fit installation.

Feature Summary

  • Utilizes silicon carbide semiconductor technology for enhanced thermal performance
  • Features a dual common emitter topology for phase leg applications
  • Designed with press-fit mounting for direct PCB integration

Applications

  • Industrial motor drives
  • Uninterruptible power supplies
  • High-frequency switching converters

Procurement Notes

Verify the specific suffix CT3AG against official Microchip documentation to confirm the exact variant specifications. Ensure compatibility with SP3F press-fit footprints during design integration. Cross-reference datasheet revisions to account for potential product change notifications or manufacturing updates that may affect pinout or electrical characteristics.

Selection Notes

Select this component when high-temperature operation and low switching losses are required. The 1.2 kV rating suits medium-voltage applications. Consider the 20 A continuous current limit and 125 W power dissipation capability relative to the system's thermal management strategy. Verify that the press-fit assembly process aligns with the target printed circuit board manufacturing capabilities.

Part Context

This part belongs to Microchip’s discrete semiconductor module portfolio, specifically targeting high-efficiency power conversion systems. It complements other SiC modules like the MSCSM series by offering a robust solution for demanding industrial environments where reliability and thermal stability are critical performance factors.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult Microchip Technology directly for qualified alternatives or updated product recommendations if this specific module is discontinued or unavailable.

APTMC120HR11CT3AGAPTMC120HR11CT3AG

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