APTMC120TAM12CTPAG

Description：MOSFET 6N-CH 1200V 220A SP6-P
Series：-

SKU:1079464f3123 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET 6N-CH 1200V 220A SP6-P
Series：-
Mfr：Microchip Technology
Package：Bulk
Technology：Silicon Carbide (SiC)
Configuration：6 N-Channel (3-Phase Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：220A (Tc)
Rds On (Max) @ Id, Vgs：12mOhm @ 150A, 20V
Vgs(th) (Max) @ Id：2.4V @ 30mA (Typ)
Gate Charge (Qg) (Max) @ Vgs：483nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：8400pF @ 1000V
Power - Max：925W
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：SP6
Supplier Device Package：SP6-P
Grade：-
Qualification：-

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APTMC120TAM12CTPAG

Overview

The APTMC120TAM12CTPAG is a discrete semiconductor module manufactured by Microchip Technology, utilizing Silicon Carbide (SiC) technology. It features a 6 N-Channel configuration designed for three-phase bridge applications. The device supports a maximum voltage of 1200V and a continuous collector current of 220A at case temperature. With a power dissipation rating of 925W, it is housed in an SP6-P chassis mount package. This component is engineered for high repetitive Unclamped Inductive Switching (UIS) capability.

Feature Summary

Utilizes Silicon Carbide (SiC) technology for enhanced performance
Features a 6 N-Channel configuration suitable for three-phase bridges
Designed with high repetitive Unclamped Inductive Switching (UIS) capability

Applications

Three-phase bridge circuits
High-power industrial motor drives
Unclamped inductive switching environments

Procurement Notes

Verify the specific ordering suffix to ensure correct packaging and variant selection. Confirm that the SP6-P chassis mount style matches the thermal management requirements of the target application. Cross-reference the datasheet for precise UIS ratings and thermal characteristics before finalizing procurement decisions.

Selection Notes

Select this module for applications requiring robust SiC performance in three-phase topologies. Ensure the chassis mount interface aligns with the system's cooling infrastructure. Validate that the 1200V blocking voltage and 220A current handling exceed the peak operational demands of the circuit design.

Part Context

This part belongs to Microchip Technology’s discrete semiconductor module portfolio. It represents a specialized solution leveraging Silicon Carbide material properties. The SP6-P package provides a standardized mechanical form factor for integration into larger power conversion systems.