ARF449BG

Overview

The ARF449BG is an N-channel enhancement mode RF power MOSFET designed for push-pull amplifier applications up to 120 MHz. It features a 450 V drain-source breakdown voltage and a continuous drain current of 9 A at 25°C case temperature. The device delivers 90 W output power with 13 dB gain and 75% efficiency at 81.36 MHz. Packaged in a TO-247, it supports operation from -55°C to +150°C junction temperature.

Feature Summary

• Symmetric common source pair configuration optimized for push-pull RF power amplifier circuits
• High electrical ruggedness capable of sustaining a 20:1 Voltage Standing Wave Ratio (VSWR)
• Nitride passivated die structure engineered to enhance long-term reliability

Applications

• Scientific RF power amplifiers
• Commercial RF power amplifiers
• Medical RF power amplifiers
• Industrial RF power amplifiers

Procurement Notes

Verify the specific suffix against the manufacturer's documentation to confirm pinout orientation. The ARF449A and ARF449B are mirror images intended for push-pull use. Confirm RoHS compliance status directly with the supplier as datasheet markings may vary by production batch.

Selection Notes

Select this component for high-frequency Class C amplifier designs requiring symmetric transistor pairs. Ensure thermal management accommodates the specified junction-to-case resistance. Verify that the operating frequency remains within the 120 MHz limit to maintain guaranteed performance metrics.

Part Context

This part belongs to the ARF449 series of RF power transistors manufactured by Microchip Technology. The series includes complementary devices designed specifically for symmetric push-pull configurations in radio frequency power amplification systems.

Replacement Considerations

The ARF446 and ARF447 are documented as meeting the same electrical specifications. They serve as functional substitutes but feature mirrored pinouts compared to the ARF449 series.