ARF460AG

Overview

The ARF460AG is an N-channel silicon RF MOSFET transistor manufactured by Microchip Technology. It features a 500 V drain-source breakdown voltage and a continuous drain current of 14 A. Designed for high-frequency applications, it operates at 65 MHz with a power output of 150 W. The device utilizes a TO-247 package for through-hole mounting and supports a maximum junction temperature of 150°C.

Feature Summary

• N-channel silicon construction optimized for radio frequency power amplification
• High-voltage capability with 500 V drain-source breakdown rating
• Robust thermal management via TO-247 through-hole packaging

Applications

• RF power amplifier circuits
• Broadband communication systems
• Industrial RF heating equipment

Procurement Notes

Verify the specific datasheet revision and product change notifications prior to procurement. Confirm that the TO-247 pinout matches the target PCB footprint. Ensure thermal interface materials are compatible with the specified maximum operating temperature limits for reliable long-term performance.

Selection Notes

Select this component when designing circuits requiring 500 V blocking capability at 65 MHz frequencies. Evaluate the 14 A continuous current rating against peak load requirements. Consider the TO-247 package constraints for board space and heat sinking infrastructure compared to surface-mount alternatives.

Part Context

This part belongs to the Microchip RF MOSFET family, specifically engineered for high-power radio frequency applications. It complements other devices in the series offering varying voltage and frequency specifications. The TO-247 form factor provides a standardized mechanical solution for discrete power semiconductor integration in industrial and commercial hardware.

Replacement Considerations

Cross-reference with ARF463AG for higher frequency operation or ARF469AG for increased power handling within similar voltage ranges.