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The ARF460BG is an N-channel RF MOSFET manufactured by Microchip Technology. It features a 500 V drain-source breakdown voltage and a continuous drain current of 14 A. Designed for high-frequency operation, it supports a working frequency of 65 MHz with a gain of 13 dB. The device delivers 150 W of output power and has a maximum power dissipation of 250 W. It operates within a temperature range of -55°C to +150°C and utilizes a TO-247-3 through-hole package.
Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the TO-247-3 through-hole mounting style aligns with the target PCB design requirements. Ensure thermal management solutions are adequate for the specified 250 W power dissipation limits under actual operating conditions.
Select this component when a high-voltage N-channel RF MOSFET is required for frequencies around 65 MHz. The 150 W output power and 500 V rating make it suitable for demanding RF environments. Consider the TO-247-3 package constraints for board layout and thermal interface design compared to surface-mount alternatives.
This device belongs to the RF MOSFET transistor category from Microchip Technology. It is part of a series of silicon-based power transistors designed for radio frequency applications. The product line focuses on providing reliable performance in high-voltage, high-power RF scenarios using standard semiconductor manufacturing processes.
Consult Microchip's official substitution guide or contact technical support for verified equivalent parts. Cross-referencing requires matching critical parameters such as Vds, Id, frequency response, and package type to ensure functional compatibility.