ARF460BG

ARF460BG

$48.16
  • Description:RF MOSFET 125V TO247CS
  • Series:-

SKU:72f7b46aa0e0 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET 125V TO247CS
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Frequency:40.68MHz
  • Gain:15dB
  • Voltage - Test:125 V
  • Current Rating (Amps):14A
  • Noise Figure:-
  • Current - Test:50 mA
  • Power - Output:-
  • Voltage - Rated:500 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247CS
  • Configuration:N-Channel

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ARF460BG

Overview

The ARF460BG is an N-channel RF MOSFET manufactured by Microchip Technology. It features a 500 V drain-source breakdown voltage and a continuous drain current of 14 A. Designed for high-frequency operation, it supports a working frequency of 65 MHz with a gain of 13 dB. The device delivers 150 W of output power and has a maximum power dissipation of 250 W. It operates within a temperature range of -55°C to +150°C and utilizes a TO-247-3 through-hole package.

Feature Summary

  • High-voltage capability with 500 V drain-source breakdown rating
  • Optimized for high-frequency RF applications up to 65 MHz
  • Robust thermal performance supporting 250 W power dissipation

Applications

  • RF power amplifier stages
  • Industrial, Scientific, and Medical (ISM) equipment
  • Radio frequency identification (RFID) systems

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the TO-247-3 through-hole mounting style aligns with the target PCB design requirements. Ensure thermal management solutions are adequate for the specified 250 W power dissipation limits under actual operating conditions.

Selection Notes

Select this component when a high-voltage N-channel RF MOSFET is required for frequencies around 65 MHz. The 150 W output power and 500 V rating make it suitable for demanding RF environments. Consider the TO-247-3 package constraints for board layout and thermal interface design compared to surface-mount alternatives.

Part Context

This device belongs to the RF MOSFET transistor category from Microchip Technology. It is part of a series of silicon-based power transistors designed for radio frequency applications. The product line focuses on providing reliable performance in high-voltage, high-power RF scenarios using standard semiconductor manufacturing processes.

Replacement Considerations

Consult Microchip's official substitution guide or contact technical support for verified equivalent parts. Cross-referencing requires matching critical parameters such as Vds, Id, frequency response, and package type to ensure functional compatibility.

ARF460BGARF460BG
$48.16
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