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The ART700FHU is a dual-section LDMOS RF power transistor based on Advanced Rugged Technology (ART). It operates within a frequency range of 1 MHz to 450 MHz and supports drain-source voltages up to 55 V. The device delivers 700 W output at 50 V and 800 W at 55 V, with a typical power gain of 28.6 dB and drain efficiency of 77.6% at 108 MHz under pulsed conditions. Key electrical parameters include a drain-source breakdown voltage of 191 V, gate-source threshold voltage of 2.1 V, and thermal resistance from junction to case of 0.175 K/W. It utilizes the SOT1214A flanged ceramic package.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct packaging and handling requirements. Confirm that the selected variant matches the required application environment, particularly regarding moisture sensitivity levels and ESD precautions during storage and assembly processes.
Select this component for high-power RF designs requiring robust performance in harsh impedance environments. Ensure the design accommodates the specified thermal resistance and maximum junction temperature limits. Verify compatibility with the intended operating voltage range between 30 V and 55 V to optimize efficiency and output power characteristics.
This part belongs to the ART700FH series, which includes variants like ART700FHS and ART700FHG. These devices share the same core LDMOS technology and electrical specifications but differ in physical packaging configurations. The ART700FHU specifically denotes the SOT1214A flanged package version suitable for heatsink mounting.
Direct substitutes within the same family include ART700FHS and ART700FHG. Note that these alternatives utilize different package outlines (SOT1214B and SOT1214C respectively), requiring mechanical redesign or adapter solutions if pinout compatibility is critical.