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Product Detailed Parameters
- Description:DIODE SIL CARBIDE 650V 56A TO220
- Series:-
- Mfr:ANBON SEMICONDUCTOR (INT'L) LIMITED
- Package:Bulk
- Technology:SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):650 V
- Current - Average Rectified (Io):56A
- Voltage - Forward (Vf) (Max) @ If:1.65 V @ 20 A
- Speed:No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):0 ns
- Current - Reverse Leakage @ Vr:20 µA @ 650 V
- Capacitance @ Vr, F:1190pF @ 0V, 1MHz
- Mounting Type:Through Hole
- Package / Case:TO-220-2
- Supplier Device Package:TO-220-2
- Operating Temperature - Junction:-55°C ~ 175°C
- Grade:-
- Qualification:-
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Overview
The AS3D020065A is a Silicon Carbide Schottky diode rated for 650V repetitive peak reverse voltage and 20A forward current at case temperatures up to 147°C. It features a TO-220-2 package with a maximum junction temperature of 175°C. Key electrical parameters include a typical forward voltage of 1.4V at 20A and 25°C, and a total capacitive charge of 37nC. The device exhibits zero reverse recovery current and positive temperature coefficient on forward voltage.
Feature Summary
- Zero reverse recovery current eliminates switching losses associated with minority carrier recombination.
- Positive temperature coefficient on forward voltage enables safe parallel operation without thermal runaway.
- Temperature-independent switching characteristics ensure consistent performance across the operating range.
- Zero forward recovery voltage prevents voltage overshoot during turn-on transitions.
Applications
- Switch Mode Power Supplies
- Power Factor Correction circuits
- Motor drive systems
- Photovoltaic Inverters
- Wind Power Station converters
Procurement Notes
Verify the manufacturer part number AS3D020065A against official Anbon Semiconductor documentation to confirm specifications. Ensure the TO-220-2 package marking ASD2065A matches the physical component. Confirm compliance with RoHS standards and check for any specific automotive or industrial qualification requirements relevant to the target application environment before finalizing procurement.
Selection Notes
Select this component for high-frequency applications requiring minimal switching losses due to its zero reverse recovery current. The positive temperature coefficient allows for easy paralleling to increase current capacity. Consider the 175°C junction temperature rating for high-temperature environments. Evaluate the thermal resistance values to determine appropriate heat sinking requirements for the specific power dissipation levels in the design.
Part Context
This component belongs to the AS3D02 series of Silicon Carbide Schottky diodes manufactured by ANBON SEMICONDUCTOR (INT'L) LIMITED. The series is designed for high-efficiency power conversion applications. The AS3D020065A specifically targets the 650V voltage class, offering a robust solution for replacing traditional silicon fast recovery diodes in modern power electronics designs.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material.
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