ChipApex | Global Electronic Components Supplier
AS3D030120P2
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DIODE ARR SIC 1200V 42A TO247-3
- Series：-
- Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io) (per Diode)：42A
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 15 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：20 µA @ 1200 V
- Operating Temperature - Junction：-55°C ~ 175°C
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
Download product information
Overview
The AS3D030120P2 is a Silicon Carbide Schottky Diode manufactured by Anbon Semiconductor. It features a TO-247-3 package and supports a maximum repetitive peak reverse voltage of 1200 V. The device handles a forward current of 30 A at a case temperature up to 150°C, with surge capabilities reaching 84 A per device. Operating junction temperatures range from -55°C to 175°C. Key electrical parameters include a typical forward voltage of 1.55 V at 15 A and 25°C, and a total capacitive charge of 43 nC.
Feature Summary
- Zero reverse recovery current and zero forward recovery voltage for minimal switching losses
- Positive temperature coefficient on forward voltage to prevent thermal runaway in parallel configurations
- Temperature-independent switching characteristics for stable performance across operating ranges
Applications
- Switch Mode Power Supplies
- Power Factor Correction circuits
- Motor drive systems
- Photovoltaic Inverters
- Wind Power Stations
Procurement Notes
Verify the specific lot date code and packaging configuration directly with the manufacturer or authorized distributor before ordering. Confirm that the TO-247-3 mounting torque requirements are met during assembly. Ensure the application environment stays within the specified 175°C junction temperature limit to maintain device reliability and longevity.
Selection Notes
Select this component when replacing bipolar devices with unipolar alternatives to reduce heat sink size. The positive temperature coefficient allows for safe parallel operation without additional balancing components. Consider the low capacitive charge for high-frequency applications where switching efficiency is critical.
Part Context
This part belongs to the AS3D030 series of Silicon Carbide Schottky Diodes from Anbon Semiconductor. The series utilizes SiC technology to achieve superior thermal and electrical performance compared to traditional silicon diodes. The TO-247-3 package provides robust mechanical stability and efficient heat dissipation for power electronics applications.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175°C.
Does the device exhibit thermal runaway risks when paralleled?
No, the device has a positive temperature coefficient on forward voltage, allowing for parallel operation without thermal runaway.
What is the reverse recovery characteristic of this diode?
The diode features zero reverse recovery current, resulting in essentially no switching losses.
