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AS3D040120P2
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Product Detailed Parameters
- Description：DIODE ARR SIC 1200V 52A TO247-3
- Series：-
- Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io) (per Diode)：52A (DC)
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 20 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：20 µA @ 1200 V
- Operating Temperature - Junction：-55°C ~ 175°C
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The AS3D040120P2 is a Silicon Carbide Schottky Diode rated for 1200V repetitive peak reverse voltage and 40A forward current. It utilizes a TO-247-3 package with a maximum junction temperature of 175°C. Key electrical parameters include a forward voltage of 1.8V typ at 20A, a total capacitive charge of 51nC, and a thermal resistance from junction to case of 0.65°C/W per leg.
Feature Summary
- Zero reverse recovery current and zero forward recovery voltage
- Positive temperature coefficient on forward voltage
- Temperature-independent switching characteristics
- Essentially no switching losses
Applications
- Switch Mode Power Supplies
- Power Factor Correction
- Motor drive systems
- PV Inverters
- Wind Power Stations
Procurement Notes
Verify the component against the official Anbon Semiconductor datasheet (Document ID AS-3243023). Confirm the part number matches exactly as AS3D040120P2 and the marking reads ASD40120P2. Ensure the package type is TO-247-3. Check that the manufacturer details align with the provided source material before finalizing procurement.
Selection Notes
Select this device for high-voltage applications requiring low switching losses and high reliability. The positive temperature coefficient allows for parallel operation without thermal runaway. Consider the 175°C operating junction temperature for high-temperature environments. Evaluate the thermal resistance values to determine appropriate heat sink requirements for the specific power dissipation needs.
Part Context
This component belongs to the AS3D0401 series of Silicon Carbide Schottky Diodes manufactured by ANBON SEMICONDUCTOR (INT'L) LIMITED. The series is designed for automotive and industrial markets, offering superior performance over traditional silicon devices in terms of efficiency and thermal management capabilities.
Replacement Considerations
Public confirmed substitute part numbers are not available in the verified source material.
FAQ
What is the maximum repetitive peak reverse voltage?
The maximum repetitive peak reverse voltage (VRRM) is 1200V.
Does the diode exhibit reverse recovery current?
No, the diode features zero reverse recovery current.
What is the maximum junction temperature?
The maximum operating junction temperature is 175°C.
