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ASA015V120B5
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Product Detailed Parameters
- Description：1200V 15A, TO247-2L, INDUSTRIAL
- Series：-
- Mfr：Luminus Devices Inc.
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io)：42A
- Voltage - Forward (Vf) (Max) @ If：1.6 V @ 15 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：60 µA @ 1200 V
- Capacitance @ Vr, F：-
- Mounting Type：Through Hole
- Package / Case：TO-247-2
- Supplier Device Package：TO-247-2L
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The ASA015V120B5 is a silicon carbide (SiC) Schottky barrier diode manufactured by APC-E, distributed under the Luminus Devices Inc. catalog. It features a 1200 V reverse voltage rating and a 15 A forward current capability in an industrial-grade TO-247-2L package. The component utilizes SiC technology to deliver superior power handling, high-frequency operation, and reduced capacitive charge compared to traditional silicon devices.
Feature Summary
- Utilizes silicon carbide semiconductor material for enhanced thermal and electrical performance
- Designed for high-frequency and high-temperature operational environments
- Provides reduced capacitive charge characteristics for efficient switching
Applications
- Industrial power conversion systems
- High-efficiency DC-DC converters
- High-voltage rectification circuits
Procurement Notes
Verify the manufacturer designation carefully, as the component is produced by APC-E but listed under Luminus Devices Inc. distribution channels. Confirm the specific datasheet version matches the required industrial grade specifications. Ensure the TO-247-2L package dimensions align with the target PCB layout constraints before finalizing procurement orders.
Selection Notes
Select this component when high blocking voltage and robust thermal performance are required in a through-hole format. The silicon carbide construction offers advantages over silicon alternatives in high-frequency applications. Evaluate the 15 A current rating against peak load requirements to ensure adequate safety margins for the intended circuit design.
Part Context
This device belongs to the family of silicon carbide Schottky barrier diodes offered by APC-E. These components are engineered to replace conventional silicon diodes in demanding power electronics applications. The product line emphasizes reliability and efficiency in high-voltage industrial settings.
Replacement Considerations
Consult official substitution guides for equivalent 1200 V SiC Schottky diodes in TO-247-2L packages. Verify pinout compatibility and thermal resistance parameters when considering alternative manufacturers.
