AT-32011-TR1

Overview

The AT-32011-TR1G is a high-performance NPN silicon bipolar transistor designed for low current and low voltage operation. It utilizes a self-aligned-transistor process with nitride passivation to achieve excellent uniformity and reliability. The device features a 4-lead SOT-143 package, offering superior RF performance compared to the 3-lead variant. Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 5.5 V, an emitter-base breakdown voltage (VEBO) of 1.5 V, and a maximum collector current (IC) of 32 mA. At 2.7 V and 2 mA bias, it delivers a minimum forward current transfer ratio (hFE) of 70.

Feature Summary

• Optimized for maximum transition frequency at low voltage operation, making it suitable for battery-powered wireless applications.
• Features a 4-lead SOT-143 surface mount package that provides higher performance than standard 3-lead configurations.
• Utilizes a 3.2 micron emitter-to-emitter pitch and reduced parasitic design for extremely fast switching and easy impedance matching.

Applications

• Low Noise Amplifiers (LNA) in wireless markets
• Gain stages and buffers for battery-operated systems
• Oscillators and active mixers operating at 900 MHz, 1.8 GHz, or 2.4 GHz

Procurement Notes

Verify the specific ordering suffix when purchasing. The 'TR1' designation indicates a 7-inch reel quantity of 3000 units. The 'G' suffix denotes a lead-free option. Confirm compatibility with high-volume surface mount assembly techniques required by your manufacturing line.

Selection Notes

Select this component for designs requiring high gain and low noise figures at low supply voltages. The 4-lead SOT-143 package is preferred over the 3-lead alternative for better RF performance. Ensure bias conditions align with the specified test parameters for optimal noise figure and associated gain characteristics.

Part Context

This part belongs to the Agilent/Broadcom AT-3 series of low-current, high-performance NPN bipolar transistors. It shares the same die technology as the AT-32033 but differs in packaging. The AT-32011 specifically uses the 4-lead SOT-143 package to enhance performance metrics compared to the industry-standard SOT-23 package used by its counterpart.

Replacement Considerations

The AT-32033 is the functional equivalent using the same die but housed in a 3-lead SOT-23 package. Substitution requires accounting for the difference in pinout and thermal resistance between the SOT-143 and SOT-23 packages.

FAQ

What is the primary advantage of the AT-32011 over the AT-32033?

The AT-32011 uses a 4-lead SOT-143 package which offers higher performance than the 3-lead SOT-23 package used by the AT-32033, despite both utilizing the same die.

At what voltage is the AT-32011 optimized for performance?

The device is optimized for performance at 2.7 V, making it ideal for end-of-life battery use in wireless applications.

What fabrication technology is used for this transistor?

It is fabricated using an optimized version of Agilent’s 10 GHz ft, 30 GHz fMAX Self-Aligned-Transistor (SAT) process with ion-implantation and gold metalization.