AT-32063-BLKG

Description：RF TRANS 2 NPN 5.5V SOT-363
Series：-

SKU:1e88cdb1dde3 Category: Bipolar RF Transistors Brand: Broadcom Limited

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Product introduction

Product Detailed Parameters

Description：RF TRANS 2 NPN 5.5V SOT-363
Series：-
Mfr：Broadcom Limited
Package：Bulk
Transistor Type：2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)：5.5V
Frequency - Transition：-
Noise Figure (dB Typ @ f)：1.1dB ~ 1.4dB @ 900MHz
Gain：12.5dB ~ 14.5dB
Power - Max：150mW
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 5mA, 2.7V
Current - Collector (Ic) (Max)：32mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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AT-32063-BLKG

Overview

The AT-32063-BLKG is a low current, high performance NPN silicon bipolar transistor from Broadcom Limited. It contains two unconnected transistors in an SOT-363 (SC-70) plastic package. The device utilizes a self-aligned-transistor process with a 3.2 micron emitter-to-emitter pitch and 20 emitter finger interdigitated geometry for fast switching and low noise. Key electrical specifications include a collector-emitter voltage of 5.5 V, collector-base voltage of 11 V, emitter-base voltage of 1.5 V, and continuous collector current of 32 mA. Power dissipation is rated at 150 mW with a junction temperature range of -65°C to 150°C.

Feature Summary

Optimized for low current and low voltage operation with high performance characteristics
Features a convenient pin-out layout specifically designed for cascode amplifier configurations
Utilizes gold metallization and ion-implantation techniques to ensure excellent device uniformity and reliability

Applications

Low Noise Amplifiers (LNA)
Gain stages
Buffer circuits
Oscillators
Active mixers

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging type. The BLKG suffix indicates bulk packaging containing one hundred units per container. Confirm RoHS compliance status through the manufacturer's latest datasheet or certification documents before finalizing procurement plans.

Selection Notes

Select this component for designs requiring high gain and low noise figures at frequencies up to 900 MHz under low bias conditions. Ensure the circuit design accommodates the SOT-363 package dimensions and thermal constraints. Verify that the required operating voltage does not exceed the maximum ratings specified in the absolute maximums table.

Part Context

This part belongs to the AT-3 series of bipolar transistors fabricated using a 10 GHz ft and 30 GHz fmax Self-Aligned-Transistor process. The series is characterized by nitride passivation for surface protection and is optimized for battery-operated systems operating at 2.7 V. The die are designed for easy matching and moderate power handling.