ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF TRANS 2 NPN 5.5V SOT-363
- Series：-
- Mfr：Broadcom Limited
- Package：Tape & Reel (TR)
- Transistor Type：2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max)：5.5V
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：1.1dB ~ 1.4dB @ 900MHz
- Gain：12.5dB ~ 14.5dB
- Power - Max：150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 5mA, 2.7V
- Current - Collector (Ic) (Max)：32mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
Download product information
Overview
The AT-32063-TR1G is a dual NPN silicon bipolar transistor housed in an SOT-363 (SC-70) surface-mount package. It features two unconnected transistors optimized for low current and low voltage operation, utilizing a self-aligned process with a 30 GHz fmax. Key electrical specifications include a collector-emitter voltage of 5.5 V, emitter-base voltage of 1.5 V, continuous collector current of 32 mA, and power dissipation of 150 mW. The device operates between -65°C and +150°C, offering high performance at 900 MHz with a minimum noise figure of 1.1 dB and associated gain of 14.5 dB.
Feature Summary
- Dual unconnected NPN transistors in a compact SOT-363 package
- Optimized for low current and low voltage applications
- High-performance RF characteristics suitable for battery-operated systems
Applications
- Low Noise Amplifiers (LNA)
- Gain stages
- Buffers
- Oscillators
- Active mixers
Procurement Notes
Verify the component status as End-of-Life (EOL). Confirm availability through authorized distributors or surplus channels, as standard supply may be restricted. Ensure compliance with RoHS directives and lead-free manufacturing requirements specified by Broadcom Limited before finalizing procurement plans.
Selection Notes
Select this component for designs requiring dual unconnected NPN transistors in a minimal footprint. It is particularly suited for 900 MHz, 1.8 GHz, and 2.4 GHz applications powered by end-of-life batteries at 2.7 V. Consider its moderate power handling and low operating currents when designing LNA or mixer circuits.
Part Context
The AT-32063 belongs to the AT-3 series of bipolar transistors fabricated using Avago’s 10 GHz ft, 30 GHz fmax Self-Aligned-Transistor (SAT) process. This series includes variants like the AT-32063-BLK and AT-32063-TR2, differing primarily in packaging quantities such as bulk or larger reels.
Replacement Considerations
Direct substitutes within the same family include AT-32063-BLKKG and AT-32063-TR2G. Verify pinout compatibility and electrical parameters against the original datasheet before implementation.
FAQ
What is the maximum operating frequency of the AT-32063?
The device has a maximum oscillation frequency (fmax) of 30 GHz.
Are the two transistors in the package connected internally?
No, the AT-32063 contains two unconnected NPN transistors, allowing flexible design configurations.
What is the typical noise figure at 900 MHz?
At 900 MHz with VCE = 2.7 V and IC = 5 mA, the minimum noise figure is typically 1.1 dB.
