AT-41435G

Overview

The AT-41435G is a general-purpose NPN silicon bipolar transistor designed for high-frequency applications up to 6 GHz. It utilizes Agilent’s 10 GHz fT Self-Aligned-Transistor (SAT) process with nitride passivation and gold metalization. The device features a 4-micron emitter-to-emitter pitch and 14-finger interdigitated geometry within a cost-effective ceramic micro-X package. Key electrical specifications include a typical gain-bandwidth product of 8.0 GHz, an optimum noise figure of 1.7 dB at 2.0 GHz, and associated gain of 14.0 dB at 2.0 GHz. Absolute maximum ratings specify a collector-emitter voltage of 12 V, collector current of 60 mA, and power dissipation of 500 mW.

Feature Summary

• Optimized for low noise and moderate power applications in VHF, UHF, and microwave frequencies
• Features easy impedance matching due to intermediate-sized transistor geometry
• Utilizes self-aligned-transistor process for excellent device uniformity and reliability
• Lead-free option available via specific ordering suffix

Applications

• Low noise amplifiers
• Wideband amplifiers
• Mixers
• Oscillators

Procurement Notes

Verify the presence of the 'G' suffix when sourcing lead-free variants. Confirm package type matches the 35 micro-X specification. Ensure compatibility with surface mount assembly techniques. Review absolute maximum ratings against circuit design limits to prevent permanent damage. Check datasheet revisions for any updates to electrical characteristics or thermal resistance values.

Selection Notes

Select this component for designs requiring high frequency performance up to 6 GHz with low noise figures. Consider the 500 mW power dissipation limit and thermal resistance of 200°C/W for heat management. Evaluate the 12 V collector-emitter voltage rating against supply requirements. The 100 mil micro-X package facilitates surface mount integration. Verify bias conditions align with optimal noise and gain performance curves.

Part Context

The AT-41435 series belongs to a family of general-purpose NPN bipolar transistors fabricated using SAT technology. It shares design similarities with other devices like the AT-41400 and AT-41433 but offers distinct packaging and performance characteristics tailored for microwave frequencies. The 35 micro-X package provides a compact solution compared to larger plastic packages used in lower frequency variants.

Replacement Considerations

AT-41435

FAQ

What is the difference between AT-41435 and AT-41435G?

The AT-41435G indicates a lead-free option. The 'G' suffix should be included in the order part number if the lead-free variant is desired.

What is the typical gain-bandwidth product of the AT-41435G?

The typical gain-bandwidth product (fT) is 8.0 GHz, measured at VCE = 8 V and IC = 25 mA.

What package does the AT-41435G use?

The device is housed in a cost-effective ceramic micro-X package, specifically the 35 micro-X package.