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Product Detailed Parameters
- Description：RF TRANS NPN 12V 8GHZ 86 PLASTIC
- Series：-
- Mfr：Broadcom Limited
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：8GHz
- Noise Figure (dB Typ @ f)：1.4dB ~ 3dB @ 1GHz ~ 4GHz
- Gain：9dB ~ 18dB
- Power - Max：500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 10mA, 8V
- Current - Collector (Ic) (Max)：60mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-86
- Supplier Device Package：86 Plastic
- Grade：-
- Qualification：-
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Overview
The AT-41486-TR2G is a general-purpose NPN silicon bipolar transistor designed for low noise and moderate power applications up to 6 GHz. Fabricated using a 10 GHz fT self-aligned-transistor process, it features a surface-mount plastic package with a .085-inch diameter and 4-micron emitter-to-emitter pitch. Key electrical specifications include a typical gain-bandwidth product of 8.0 GHz, an optimum noise figure of 1.4 dB at 1.0 GHz, and 1.7 dB at 2.0 GHz. Associated gain reaches 18.0 dB at 1.0 GHz and 13.0 dB at 2.0 GHz. The device operates with a collector-emitter voltage of 12 V, a collector current of 60 mA, and a power dissipation of 500 mW.
Feature Summary
- Utilizes a 10 GHz fT self-aligned-transistor fabrication process for high-frequency performance.
- Features a 14-emitter finger interdigitated geometry that yields impedances easy to match for low noise applications.
- Housed in a low-cost surface mount plastic package suitable for tape-and-reel processing.
Applications
- Low noise amplifier (LNA) stages in wireless systems
- Gain stage amplification
- Buffer circuits
- Oscillator designs
- Mixer applications
Procurement Notes
Verify the specific ordering suffix required for the desired packaging format. The TR2 designation corresponds to a 13-inch reel containing 4000 devices. Confirm lead-free availability by checking for the G suffix on the part number. Ensure compatibility with standard SMD assembly processes given the plastic package dimensions.
Selection Notes
Select this component when a general-purpose NPN transistor is needed for frequencies up to 6 GHz with low noise characteristics. It is suitable for impedance matching in LNA and buffer designs. Consider the 500 mW power dissipation limit and 12 V collector-emitter voltage rating during circuit design. Verify thermal management requirements based on the specified junction temperature limits.
Part Context
This component belongs to Avago Technologies' portfolio of RF bipolar transistors. It is manufactured using a self-aligned-transistor process optimized for high-frequency operation. The device is widely used in wireless communication systems requiring reliable low-noise amplification and signal processing capabilities within the specified frequency range.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided documentation. Evaluate alternative NPN silicon bipolar transistors with similar gain-bandwidth products and noise figures. Ensure any replacement matches the 86 plastic package dimensions and pin configuration for board compatibility.
FAQ
What is the typical gain-bandwidth product of the AT-41486?
The typical gain-bandwidth product (fT) is 8.0 GHz, measured at VCE = 8 V and IC = 25 mA.
How does the packaging option affect the part number?
The 'TR2' suffix indicates a 13-inch reel containing 4000 devices. Adding a 'G' suffix denotes a lead-free option.
What is the maximum collector-emitter voltage rating?
The absolute maximum collector-emitter voltage (VCEO) is 12 V.
