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The AT-41500-GP4 is a general-purpose NPN silicon bipolar transistor chip from Broadcom Limited (formerly Avago Technologies). Fabricated using a 10 GHz fT self-aligned-transistor process, it features a 4-micron emitter-to-emitter pitch and nitride passivation for surface protection. Designed for VHF, UHF, and microwave frequencies up to 6 GHz, the device offers low noise figure and high associated gain. Key electrical specifications at VCE=8V include a typical noise figure of 1.4 dB at 1 GHz, 17.0 dB gain at 1 GHz, and an 8.0 GHz gain-bandwidth product. It supports a maximum collector current of 60 mA and power dissipation of 500 mW.
Verify the component origin as Broadcom Limited, noting the historical branding transition from Avago Technologies. Confirm the specific ordering suffix GP4 corresponds to the standard tray quantity of 100 devices per tray as documented in the official datasheet. Ensure the received parts match the specified die thickness range of 5 to 6 mils during incoming inspection.
Select this component for designs requiring a balance between low noise performance and moderate power output in the microwave spectrum. The device is particularly suitable when a 50 Ohm noise match near 1 GHz is required. Designers should account for the thermal resistance of 95 °C/W and derating requirements above 153 °C mounting surface temperature.
This part belongs to the AT-41500 series of silicon bipolar transistor chips. The GP4 suffix denotes the specific packaging and tray configuration containing 100 devices. The series is characterized by its use in general-purpose RF applications where consistent performance across VHF to microwave ranges is critical.
No direct public substitute part numbers are confirmed in the provided documentation. Engineers must evaluate alternative NPN bipolar transistor chips based on matching fT, noise figure, and package compatibility if replacement is necessary.
The absolute maximum rating for collector current (IC) is 60 mA.
The 15 emitter fingers interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications.
The typical optimum noise figure at 2.0 GHz is 1.7 dB when measured at VCE=8V and IC=10mA.