AT-41532-TR2G

Overview

The AT-41532-TR2G is an NPN silicon RF bipolar transistor manufactured by Broadcom Limited. It features a collector current of up to 50mA and a maximum power dissipation of 225mW. The device has a collector-emitter breakdown voltage of 12V and operates at frequencies up to 24 GHz. Packaged in SC70-3 (SOT-323) surface-mount housing, it is designed for high-performance radio frequency applications requiring low noise and high gain characteristics within the specified operational limits.

Feature Summary

• NPN silicon construction optimized for radio frequency signal amplification
• High-frequency operation capability supporting wide bandwidth requirements
• Compact surface-mount packaging suitable for space-constrained designs

Applications

• RF amplifier stages in wireless communication modules
• Low-noise amplification in receiver front-ends
• Signal processing in mobile device antenna systems

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors due to obsolescence status. Confirm package marking and lot traceability against original documentation. Ensure storage conditions comply with semiconductor handling standards to prevent degradation prior to assembly.

Selection Notes

Evaluate thermal management requirements given the 225mW dissipation limit. Assess impedance matching networks for optimal performance at target operating frequencies. Consider alternative components if current supply constraints exist due to end-of-life status.

Part Context

This component belongs to Broadcom's discrete semiconductor product line focused on radio frequency solutions. It represents a transition from Hewlett-Packard legacy designs now managed under Broadcom Limited. The part serves as a specialized active element for analog RF circuit design.

Replacement Considerations

Direct substitutes include AT-41532-TR1. Verify pin compatibility and electrical parameter equivalence before implementation.