AT-41586-TR1G

Overview

The AT-41586-TR1G is a general-purpose NPN bipolar transistor designed for high-frequency applications. It utilizes a 10 GHz fT self-aligned-transistor process and features a low-cost surface mount .085-inch diameter plastic package (Outline 86). The device incorporates a 14-emitter finger interdigitated geometry with a 4-micron emitter-to-emitter pitch, facilitating impedance matching for low noise and moderate power operations. Key electrical specifications include a maximum collector current of 60 mA, a collector-emitter voltage rating of 12 V, and a power dissipation capacity of 500 mW. At 1 GHz, it typically achieves a noise figure of 1.4 dB and an associated gain of 17.0 dB.

Feature Summary

• Utilizes a 10 GHz fT self-aligned-transistor fabrication process for excellent high-frequency performance.
• Features a 14-emitter finger interdigitated geometry that yields impedances easy to match for low noise applications.
• Housed in a low-cost surface mount .085-inch diameter plastic package suitable for tape and reel processing.

Applications

• Low noise amplifier (LNA) stages in wireless systems
• General purpose gain stage amplification
• Buffer circuits requiring stable signal transmission
• Oscillator designs operating in the 1 to 2 GHz range
• Mixer applications within RF front-end architectures

Procurement Notes

Verify the ordering suffix matches the required packaging format, as the TR1G designation specifically indicates a 1000-unit quantity on a 7-inch reel. Confirm lead-free compliance status if environmental regulations apply to the assembly process. Ensure the component source aligns with the manufacturer's authorized distribution channels to guarantee authenticity and traceability of the silicon die.

Selection Notes

Select this component when designing circuits requiring a balance between low noise performance and moderate power handling capabilities. The device is optimized for operation near a 50 Ω noise match in the 1 to 2 GHz frequency band. Consider the specific biasing requirements, as optimal noise figures are achieved at a collector current of 10 mA, while higher currents may be necessary for increased power output applications.

Part Context

This component belongs to the AT-41586 family of low-cost general-purpose transistors originally developed by Avago Technologies. The series is characterized by its use of ion-implantation and gold metalization techniques to ensure device uniformity and reliability. The Outline 86 plastic package provides a standardized footprint for surface mount technology integration in compact electronic assemblies.

Replacement Considerations

Direct replacements must maintain compatibility with the Outline 86 plastic package and support similar RF performance metrics. Verify that alternative NPN bipolar transistors offer comparable noise figures and gain characteristics within the target frequency range to ensure circuit functionality remains unchanged during substitution.