AT-42036-TR1G

AT-42036-TR1G

  • Description:RF TRANS NPN 12V 8GHZ 36 MICRO-X
  • Series:-

SKU:ec1d9bb91a27 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 12V 8GHZ 36 MICRO-X
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:8GHz
  • Noise Figure (dB Typ @ f):2dB ~ 3dB @ 2GHz ~ 4GHz
  • Gain:10dB ~ 13.5dB
  • Power - Max:600mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 35mA, 8V
  • Current - Collector (Ic) (Max):80mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD (36 micro-X)
  • Supplier Device Package:36 micro-X
  • Grade:-
  • Qualification:-

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AT-42036-TR1G

Overview

The AT-42036 is a general-purpose NPN bipolar transistor designed for VHF, UHF, and microwave applications. It features a typical gain-bandwidth product of 8.0 GHz and operates within a collector-emitter voltage range up to 12 V. At 2.0 GHz, the device delivers a typical P1 dB output power of 21.0 dBm with 14.0 dB gain. At 4.0 GHz, it provides 20.5 dBm output power and 9.5 dB gain. The minimum noise figure is 1.9 dB at 2.0 GHz. Fabricated using a 10 GHz self-aligned process, it utilizes a 36 micro-X surface mount package.

Feature Summary

  • High-frequency performance suitable for wideband amplifier, mixer, and oscillator functions in VHF, UHF, and microwave bands.
  • Optimized impedance matching characteristics facilitate low noise and medium power application designs.
  • Self-aligned transistor fabrication ensures excellent device uniformity, reliability, and surface protection.

Applications

  • Low noise amplifiers
  • Wideband amplifiers
  • Mixers
  • Oscillators

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging configuration. The AT-42036-TR1G variant indicates a reel quantity of 1000 devices on a 7-inch carrier tape. Confirm that the component meets RoHS compliance requirements if applicable to the manufacturing environment before finalizing procurement orders.

Selection Notes

Select this component for circuits requiring high gain and moderate output power across VHF to microwave frequencies. Ensure bias conditions align with the specified test parameters, typically VCE = 8 V and IC = 35 mA for power metrics. Verify thermal management capabilities as the junction temperature limit is 150°C with a thermal resistance of 175°C/W.

Part Context

This component belongs to the Avago Technologies (now Broadcom Limited) portfolio of silicon bipolar transistors. It is manufactured using a 10 GHz fT self-aligned process technology. The device serves as a discrete solution for RF front-end stages where integrated circuits may lack the necessary power handling or specific frequency response characteristics.

Replacement Considerations

No direct public substitute part numbers are documented in the provided datasheet. Designers should evaluate alternative NPN bipolar transistors from other manufacturers based on equivalent gain-bandwidth products, package dimensions, and maximum voltage ratings.

FAQ

What is the maximum collector current rating?

The absolute maximum collector current (IC) is rated at 80 mA.

What is the typical noise figure at 4.0 GHz?

The typical optimum noise figure (NFO) at 4.0 GHz is 3.0 dB when biased at VCE = 8 V and IC = 10 mA.

How is the device packaged?

The AT-42036 is housed in a cost-effective ceramic microstrip 36 micro-X surface mount package.

AT-42036-TR1GAT-42036-TR1G

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