AT-42070

Description：RF TRANS NPN 12V 8GHZ 70 MIL PKG
Series：-

SKU:452ce1fc7155 Category: Bipolar RF Transistors Brand: Broadcom Limited

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 12V 8GHZ 70 MIL PKG
Series：-
Mfr：Broadcom Limited
Package：Bulk
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：8GHz
Noise Figure (dB Typ @ f)：1.9dB ~ 3dB @ 2GHz ~ 4GHz
Gain：10.5dB ~ 14dB
Power - Max：600mW
DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 35mA, 8V
Current - Collector (Ic) (Max)：80mA
Operating Temperature：200°C (TJ)
Mounting Type：Surface Mount
Package / Case：4-SMD (70 mil)
Supplier Device Package：70 mil Package
Grade：-
Qualification：-

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AT-42070

Overview

The AT-42070 is a general-purpose NPN silicon bipolar transistor designed for VHF, UHF, and microwave applications. Fabricated using a 10 GHz fT self-aligned-transistor process with nitride passivation, it features a hermetic gold-ceramic microstrip package. Key electrical specifications include a typical gain-bandwidth product of 8.0 GHz at VCE = 8 V and IC = 35 mA. At 2.0 GHz, the device delivers a typical P1 dB of 21.0 dBm and G1 dB of 15.0 dB. The minimum forward current transfer ratio (hFE) is 30 under standard test conditions.

Feature Summary

Hermetic gold-ceramic microstrip package ensures high reliability and surface protection via nitride passivation.
Self-aligned-transistor fabrication process enables excellent device uniformity and performance across frequencies.
Optimized impedance matching near 50Ω up to 1 GHz facilitates straightforward low noise amplifier integration.

Applications

Low noise wideband amplifiers
Mixers
Oscillators

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revision status prior to implementation. Ensure handling procedures respect the hermetic packaging integrity. Validate thermal management strategies against the specified junction temperature limits during final assembly.

Selection Notes

Evaluate operating frequency requirements against the 8.0 GHz gain-bandwidth product. Assess power output needs relative to the 21.0 dBm compression point at 2.0 GHz. Consider the 1.9 dB noise figure for sensitive receiver front-end designs. Verify biasing compatibility with the 8 V collector-emitter voltage specification.

Part Context

This component belongs to the Avago Technologies medium power silicon bipolar transistor family. It utilizes a 4 micron emitter-to-emitter pitch with a 20-finger interdigitated geometry. The design targets applications requiring easy impedance matching for both low noise and medium power operations in the VHF, UHF, and microwave bands.