AT-64000-GP4

AT-64000-GP4

  • Description:RF TRANS NPN 20V BIPOLAR CHIP
  • Series:-

SKU:ec32dcf52748 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 20V BIPOLAR CHIP
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tray
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):20V
  • Frequency - Transition:-
  • Noise Figure (dB Typ @ f):-
  • Gain:-
  • Power - Max:3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 110mA, 8V
  • Current - Collector (Ic) (Max):200mA
  • Operating Temperature:200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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AT-64000-GP4

Overview

The AT-64000 is a high-performance NPN silicon bipolar transistor designed for medium power, wideband amplifier and oscillator applications across VHF, UHF, and microwave frequencies. It utilizes ion-implantation, self-alignment techniques, and golf metallization to ensure device uniformity and reliability. The device incorporates emitter ballast resistors to maintain uniform current distribution through multiple emitter fingers. It is available in the AT-64000-GP4 configuration, packaged in trays of 100 units.

Feature Summary

  • High output power capability with typical P1dB of 27.5 dBm at 2.0 GHz and 26.5 dBm at 4.0 GHz
  • High gain performance at 1 dB compression, achieving 12.5 dB at 2.0 GHz and 9.5 dB at 4.0 GHz
  • Total efficiency reaches 35% at 1 dB gain compression under specified operating conditions

Applications

  • Medium power wideband amplifiers
  • Oscillator circuits operating over VHF, UHF, and microwave frequencies

Procurement Notes

Verify the specific ordering suffix GP4 when sourcing components to confirm tray packaging quantities. Confirm RoHS compliance status directly with the manufacturer or authorized distributors as regulatory requirements may vary by region and production batch. Ensure thermal management solutions are compatible with the BeO package specifications provided in the datasheet.

Selection Notes

Select this component for designs requiring linear power amplification in the VHF to microwave spectrum. Evaluate thermal resistance and junction temperature limits against the intended heat sink design. Verify that the required collector-emitter voltage and current ratings align with the absolute maximum ratings to prevent permanent damage during operation.

Part Context

This device belongs to the Avago Technologies RF bipolar transistor family, utilizing advanced fabrication techniques such as ion implantation and self-alignment. The technology ensures consistent performance and reliability across manufacturing batches. The product line targets high-frequency applications where linearity and power density are critical design parameters.

Replacement Considerations

Consult official documentation for confirmed substitute part numbers. Cross-referencing requires matching electrical characteristics, package dimensions, and thermal properties to ensure functional compatibility in existing circuit designs.

AT-64000-GP4AT-64000-GP4

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