AT-64020

Description：RF TRANS NPN 20V 200SMD
Series：-

SKU:a035ba700895 Category: Bipolar RF Transistors Brand: Broadcom Limited

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 20V 200SMD
Series：-
Mfr：Broadcom Limited
Package：Bulk
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：20V
Frequency - Transition：-
Noise Figure (dB Typ @ f)：-
Gain：-
Power - Max：3W
DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 110mA, 8V
Current - Collector (Ic) (Max)：200mA
Operating Temperature：200°C (TJ)
Mounting Type：Surface Mount
Package / Case：4-SMD (200 mil BeO)
Supplier Device Package：-
Grade：-
Qualification：-

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AT-64020

Overview

The AT-64020 is a high-performance NPN silicon bipolar transistor designed for medium power, wideband amplifier and oscillator applications across VHF, UHF, and microwave frequencies. It operates within a collector-emitter voltage of 20V and supports a maximum collector current of 200mA with 3W power dissipation. At 2.0 GHz, it delivers a typical output power of 27.5 dBm and gain of 10.0 dB at 1 dB compression. Performance at 4.0 GHz includes 26.5 dBm output power and 6.5 dB gain. The device utilizes ion-implantation techniques and emitter ballast resistors to ensure uniform current distribution.

Feature Summary

Hermetic metal/beryllia package provides excellent thermal characteristics
Ion-implanted emitter ballast resistors ensure uniform current distribution
Self-alignment fabrication techniques enhance device reliability

Applications

Medium power wideband amplifiers
Oscillator circuits operating over VHF, UHF, and microwave frequencies

Procurement Notes

Verify component authenticity through authorized channels due to the device's specialized hermetic packaging. Confirm that the supplier provides original Avago/Broadcom documentation matching the datasheet specifications. Check for any specific handling requirements associated with beryllium oxide materials during installation.

Selection Notes

Select this component when designing circuits requiring stable performance in the VHF to microwave range. Ensure the design accommodates the 200 mil BeO package dimensions and thermal resistance parameters. Verify biasing conditions align with the specified 16V collector voltage and 110mA current for optimal efficiency.

Part Context

This part belongs to the family of linear power silicon bipolar transistors manufactured by Broadcom Limited (formerly Avago). It is specifically engineered for RF applications where high linearity and thermal stability are critical requirements for signal integrity.