AT-64023

Description：RF TRANS NPN 20V 230 MIL BE0
Series：-

SKU:93a07f0febfc Category: Bipolar RF Transistors Brand: Broadcom Limited

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 20V 230 MIL BE0
Series：-
Mfr：Broadcom Limited
Package：Bulk
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：20V
Frequency - Transition：-
Noise Figure (dB Typ @ f)：-
Gain：-
Power - Max：3W
DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 110mA, 8V
Current - Collector (Ic) (Max)：200mA
Operating Temperature：200°C (TJ)
Mounting Type：Surface Mount
Package / Case：4-SMD (230 mil BeO)
Supplier Device Package：230 mil Be0
Grade：-
Qualification：-

Download product information

AT-64023

Overview

The AT-64023 is a high-performance NPN silicon bipolar transistor designed for medium power, wideband amplifier and oscillator applications across VHF, UHF, and microwave frequencies. It operates up to 4 GHz with a typical P1 dB of 27.5 dBm at 2.0 GHz and 26.5 dBm at 4.0 GHz. The device provides 12.5 dB gain at 2.0 GHz and 9.5 dB at 4.0 GHz under VCE = 16 V and IC = 110 mA conditions. It features emitter ballast resistors for uniform current distribution and is housed in a hermetic metal/beryllia stripline package.

Feature Summary

Hermetic metal and beryllia oxide flange package providing excellent thermal characteristics
Ion-implanted emitter ballast resistors ensure uniform current distribution through multiple emitter fingers
Fabricated using ion-implantation, self-alignment techniques, and gold metallization

Applications

Medium power wideband amplifiers
Oscillators operating over VHF, UHF, and microwave frequencies

Procurement Notes

Verify the specific datasheet version and revision date before implementation, as component specifications may be subject to change by the manufacturer. Confirm that the hermetic BeO package dimensions and pinout match the target PCB footprint requirements. Ensure proper thermal management design is implemented given the specified junction temperature limits and thermal resistance values.

Selection Notes

Select this component for designs requiring linear power amplification up to 4 GHz with high output power capabilities. Consider the 230 mil BeO package size and mounting requirements during mechanical layout. Evaluate the thermal resistance of 40°C/W and derating curves for operation above 80°C case temperature to ensure reliability within the absolute maximum ratings.

Part Context

The AT-64023 belongs to the family of linear power silicon bipolar transistors from Broadcom Limited (formerly Avago Technologies). It is specifically engineered for RF applications where high linearity and power efficiency are critical. The device utilizes advanced fabrication techniques to achieve consistent performance and reliability across production batches.