ATF-33143-TR2G

Overview

The ATF-33143-TR2G is a GaAs pHEMT RF transistor manufactured by Broadcom Limited. It operates at a frequency of 2 GHz with a gain of 15 dB and a noise figure of 0.5 dB. The device features an N-Channel configuration in an SOT-343 package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 5.5 V, a gate-source breakdown voltage (Vgs) of -5 V, and a continuous drain current (Id) of 305 mA. Power dissipation is rated at 600 mW, with a maximum operating temperature of +160 C. The P1dB compression point is 22 dBm, and the minimum forward transconductance is 440 mmho.

Feature Summary

• Utilizes Gallium Arsenide (GaAs) pHEMT technology for high-frequency performance.
• Provides low noise amplification characteristics suitable for sensitive RF front-end stages.
• Designed for surface-mount installation in compact SOT-343 packages.

Applications

• Low noise amplifier circuits in wireless communication systems
• RF signal processing in mobile handset architectures
• Wireless access point receiver chains

Procurement Notes

This component is officially listed as obsolete or end-of-life by the manufacturer. Verification of availability requires checking authorized distributors for remaining stock or surplus channels. Designers should confirm RoHS compliance status through official datasheets before procurement planning. Substitute components must be evaluated for pin compatibility and electrical equivalence to ensure circuit continuity.

Selection Notes

Select this part for applications requiring a 2 GHz GaAs pHEMT with low noise figures around 0.5 dB. Ensure the design accommodates the SOT-343 footprint and thermal requirements for 600 mW dissipation. Verify that the 5.5 V drain-source voltage rating aligns with the system power supply constraints. Consider the 305 mA current capability when designing bias networks.

Part Context

The ATF-33143 series belongs to Broadcom's portfolio of RF FETs designed for cellular and wireless infrastructure. This specific model represents a legacy GaAs solution prior to the widespread adoption of newer process technologies. It was commonly integrated into base station and mobile device RF front ends during the 2G/3G era.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult Broadcom's official obsolescence notices or equivalent technical specifications from other manufacturers for direct replacements.