ATF-34143-TR1

ATF-34143-TR1

$1.33
  • Description:RF MOSFET PHEMT FET 4V SOT343
  • Series:-

SKU:280b3d2169c9 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET PHEMT FET 4V SOT343
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Technology:pHEMT FET
  • Frequency:2GHz
  • Gain:17.5dB
  • Voltage - Test:4 V
  • Current Rating (Amps):145mA
  • Noise Figure:0.5dB
  • Current - Test:60 mA
  • Power - Output:20dBm
  • Voltage - Rated:5.5 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:SC-82A, SOT-343
  • Supplier Device Package:SOT-343
  • Configuration:-

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ATF-34143-TR1

Overview

The ATF-34143-TR1 is a GaAs pHEMT RF JFET transistor manufactured by Broadcom Limited. It operates at a frequency of 2 GHz with a gain of 17.5 dB and a noise figure of 0.5 dB. The device features an N-channel configuration, a drain-source breakdown voltage (Vds) of 5.5 V, and a gate-source breakdown voltage (Vgs) of -5 V. Continuous drain current is rated at 145 mA, with a maximum power dissipation of 725 mW. It utilizes an SOT-343 surface-mount package and supports a maximum operating temperature of +160 °C.

Feature Summary

  • Utilizes GaAs pHEMT technology for low-noise performance
  • Designed for high-gain RF applications up to 2 GHz
  • Optimized for minimal noise figure in signal amplification

Applications

  • Low noise amplifier stages in RF circuits
  • Signal processing in wireless communication systems
  • Front-end modules requiring high gain and low noise

Procurement Notes

Verify component authenticity through authorized channels due to discontinued status. Confirm RoHS compliance details via official documentation. Ensure storage conditions maintain integrity given the end-of-life classification. Cross-reference datasheet revisions to match specific manufacturing batches.

Selection Notes

Select this component when a 17.5 dB gain and 0.5 dB noise figure are required at 2 GHz. Compare against ATF-34143-TR2G for identical electrical specifications but different packaging configurations. Evaluate thermal management requirements based on the 725 mW power dissipation limit within the SOT-343 footprint.

Part Context

This part belongs to the ATF-34143 series of GaAs pHEMT transistors from Broadcom. It shares core electrical characteristics with other variants like the ATF-34143-BLKG and ATF-34143-TR2G, differing primarily in packaging and reel specifications. The series is designed for general-purpose low-noise amplification in RF applications.

Replacement Considerations

ATF-34143-TR2G offers identical electrical parameters including 17.5 dB gain and 0.5 dB noise figure. Verify pinout compatibility and thermal resistance differences between TR1 and TR2G packaging before substitution.

ATF-34143-TR1ATF-34143-TR1
$1.33
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