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The ATF-34143-TR1 is a GaAs pHEMT RF JFET transistor manufactured by Broadcom Limited. It operates at a frequency of 2 GHz with a gain of 17.5 dB and a noise figure of 0.5 dB. The device features an N-channel configuration, a drain-source breakdown voltage (Vds) of 5.5 V, and a gate-source breakdown voltage (Vgs) of -5 V. Continuous drain current is rated at 145 mA, with a maximum power dissipation of 725 mW. It utilizes an SOT-343 surface-mount package and supports a maximum operating temperature of +160 °C.
Verify component authenticity through authorized channels due to discontinued status. Confirm RoHS compliance details via official documentation. Ensure storage conditions maintain integrity given the end-of-life classification. Cross-reference datasheet revisions to match specific manufacturing batches.
Select this component when a 17.5 dB gain and 0.5 dB noise figure are required at 2 GHz. Compare against ATF-34143-TR2G for identical electrical specifications but different packaging configurations. Evaluate thermal management requirements based on the 725 mW power dissipation limit within the SOT-343 footprint.
This part belongs to the ATF-34143 series of GaAs pHEMT transistors from Broadcom. It shares core electrical characteristics with other variants like the ATF-34143-BLKG and ATF-34143-TR2G, differing primarily in packaging and reel specifications. The series is designed for general-purpose low-noise amplification in RF applications.
ATF-34143-TR2G offers identical electrical parameters including 17.5 dB gain and 0.5 dB noise figure. Verify pinout compatibility and thermal resistance differences between TR1 and TR2G packaging before substitution.