ATF-511P8-TR1

Overview

The ATF-511P8 is a high linearity enhancement mode pseudomorphic HEMT housed in an 8-lead JEDEC-standard leadless plastic chip carrier (LPCC) package measuring 2.0 x 2.0 x 0.75 mm. It operates from 50 MHz to 6 GHz with single positive Vgs biasing, eliminating the need for negative gate voltage. At 2 GHz with Vds = 4.5V and Ids = 200 mA, it delivers a typical output IP3 of 41.7 dBm, P1dB of 30 dBm, noise figure of 1.4 dB, gain of 14.8 dB, and PAE of 69%. The device features excellent uniformity, point MTTF exceeding 300 years at +85°C mounting temperature, MSL-1 rating, and lead-free construction.

Feature Summary

• Single voltage operation utilizing enhancement mode technology
• High linearity and P1dB performance with low noise figure
• Small 2x2 mm LPCC package with backside metalization for thermal dissipation

Applications

• Front-end LNA Q2 and Q3 driver or pre-driver amplifier for Cellular/PCS and WCDMA wireless infrastructure
• Driver amplifier for WLAN, WLL/RLL and MMDS applications
• General purpose discrete E-pHEMT for other high linearity applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm container type and quantity. The datasheet lists ATF-511P8-TR1 as a 3000-unit 7-inch reel and ATF-511P8-TR2 as a 10000-unit 13-inch reel. Confirm that the component meets RoHS compliance requirements if applicable to your design specifications before finalizing procurement.

Selection Notes

Select this component when designing circuits requiring high linearity and low noise in a compact form factor. Ensure the bias network supports the required Vds and Ids levels for optimal OIP3 and P1dB performance. Consider the thermal resistance characteristics and PCB land pattern guidelines provided in the datasheet to maintain channel temperature within safe operating limits during continuous RF drive conditions.

Part Context

The ATF-511P8 belongs to the family of pseudomorphic HEMT devices designed for RF power amplification. Manufactured originally by Avago Technologies, which was later acquired by Broadcom Inc., this component represents a standard solution for medium-power amplification tasks in wireless communication systems. The device utilizes enhancement mode technology to simplify biasing requirements compared to conventional depletion mode devices.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs if considering alternative manufacturers or updated generations of similar RF transistors.

FAQ

What is the operational gate voltage range for the ATF-511P8?

The operational gate voltage ranges from 0.25 V to 0.8 V when biased at Vds = 4.5V and Ids = 200 mA.

How does the ATF-511P8 handle thermal dissipation?

The device features backside metalization in its 2x2 mm LPCC package, providing excellent thermal dissipation capabilities and visual evidence of solder reflow.

What is the maximum RF input power the device can safely handle?

The device can safely handle +30 dBm RF input power, provided the gate current (Igs) is limited to 46 mA.