ATF-52189-BLK

ATF-52189-BLK

  • Description:RF MOSFET E-PHEMT 4.5V SOT89
  • Series:-

SKU:de91c2b3eb6d Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET E-PHEMT 4.5V SOT89
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Strip
  • Technology:E-pHEMT
  • Frequency:2GHz
  • Gain:16dB
  • Voltage - Test:4.5 V
  • Current Rating (Amps):500mA
  • Noise Figure:1.5dB
  • Current - Test:200 mA
  • Power - Output:27dBm
  • Voltage - Rated:7 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:TO-243AA
  • Supplier Device Package:SOT-89
  • Configuration:-

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ATF-52189-BLK

Overview

The Broadcom ATF-52189-BLK is a high linearity mode enhancement pseudomorphic HEMT (E-pHEMT) in an SOT-89 surface mount package. It operates from 50 MHz to 6 GHz with single positive Vgs bias, eliminating negative gate voltage requirements. Key electrical specifications at 4.5V/200 mA include a typical gain of 16.0 dB, output IP3 of 42.0 dBm, and P1dB of 27.0 dBm at 2 GHz. The device achieves a noise figure of 1.50 dB and 55% power added efficiency at P1dB. Absolute maximum ratings specify a drain-source voltage of 7V and total power dissipation of 1.5W.

Feature Summary

  • Single voltage operation utilizing enhancement mode technology for simplified biasing
  • High linearity performance with elevated output third-order intercept point
  • Low noise figure characteristics suitable for sensitive front-end stages
  • Standard SOT-89 surface mount package for cost-effective integration

Applications

  • Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier for Cellular/PCS and WCDMA wireless infrastructure
  • Driver Amplifier for WLAN, WLL/RLL and MMDS applications
  • General purpose discrete E-pHEMT for other high linearity applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging configuration. The datasheet indicates tape-and-reel options are available alongside standard cut-tape formats. Confirm RoHS compliance status and lead-free manufacturing details directly with the manufacturer or authorized distributor before finalizing procurement orders.

Selection Notes

Select this component for designs requiring medium-power amplification with strict linearity constraints in cellular and wireless infrastructure. Evaluate thermal management capabilities as the channel-to-board thermal resistance is specified at 52°C/W. Ensure bias circuits support the required 4.5V drain voltage and appropriate quiescent current levels for optimal OIP3 and P1dB performance.

Part Context

This device belongs to the Broadcom (formerly Avago Technologies) portfolio of pseudomorphic HEMT amplifiers. It is designed specifically for RF front-end modules where high linearity and low noise are critical. The SOT-89 package provides a compact solution compared to larger ceramic packages while maintaining robust performance metrics for base station and access point applications.

Replacement Considerations

Public confirmed substitute part numbers are not provided in the source material. Verify pinout compatibility and electrical parameter overlaps with potential alternatives through independent datasheet comparison.

ATF-52189-BLKATF-52189-BLK

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