ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 3A 8SOIC
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：3A
- Rds On (Max) @ Id, Vgs：130mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：255pF @ 25V
- Power - Max：2.4W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The AUIRF7103QTR is an automotive-grade dual N-channel HEXFET power MOSFET in an SO-8 package. It features a maximum drain-source voltage of 50V and a continuous drain current of 3.0A at 25°C. The device offers a maximum on-resistance of 130mΩ at VGS=10V and 200mΩ at VGS=4.5V, supporting logic-level gate drive. It operates up to a junction temperature of 175°C with fast switching capabilities and allows repetitive avalanche operation.
Feature Summary
- Dual N-channel configuration utilizing advanced planar technology for low on-resistance per silicon area
- Automotive qualified design ensuring reliability under harsh operating conditions
- Logic level gate drive capability enabling efficient control from standard microcontrollers
- Ruggedized device structure allowing repetitive avalanche energy handling
Applications
- Automotive power management systems
- Motor control circuits
- High-side or low-side load switching applications
Procurement Notes
Verify the specific ordering suffix matches the required tape and reel quantity of 4000 units. Confirm that the component meets the necessary AEC-Q101 qualification standards for your target automotive application. Ensure compatibility with the SO-8 surface mount footprint during PCB layout. Check for RoHS compliance requirements if applicable to your manufacturing process.
Selection Notes
Select this component when a dual N-channel MOSFET with automotive reliability is required. The 50V rating suits low-voltage automotive bus architectures. Logic-level drive simplifies interface design with 3.3V or 5V controllers. Consider thermal derating curves for high ambient temperature environments to ensure safe operation within the 175°C limit.
Part Context
This part belongs to Infineon's HEXFET family, known for robust power switching performance. The 'AU' prefix indicates automotive qualification according to AEC-Q101 standards. The 'TR' suffix specifies the tape and reel packaging format suitable for automated surface-mount assembly processes.
Replacement Considerations
Direct replacements must match the SO-8 package, 50V rating, and dual N-channel topology. Verify that any substitute maintains equivalent RDS(on) values and gate charge characteristics to preserve switching efficiency. Ensure the alternative component also holds automotive qualification if used in safety-critical systems.
