ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 4.3A 8SOIC
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.3A
- Rds On (Max) @ Id, Vgs：90mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：610pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
Download product information
Overview
The AUIRF7304QTR is a dual P-channel HEXFET power MOSFET in an SO-8 package. It features a -20V drain-source breakdown voltage and a continuous drain current of -4.3A at 25°C, rising to -4.7A under specific conditions. The maximum on-resistance is 90mΩ at VGS=-4.5V. Operating junction temperature ranges from -55°C to +150°C with a maximum power dissipation of 2W.
Feature Summary
- Dual P-channel configuration for efficient circuit design
- Automotive qualified per AEC-Q101 standards
- Advanced planar technology for low on-resistance
- Logic level gate drive capability
Applications
- Automotive load switching applications
- Power management circuits requiring ruggedized devices
- Cellular infrastructure power supplies
Procurement Notes
Verify the component matches the exact Infineon Technologies part number AUIRF7304QTR. Confirm the datasheet revision aligns with your project requirements. Ensure the SO-8 package type meets your PCB layout specifications. Check for RoHS compliance documentation if required by your manufacturing standards.
Selection Notes
Select this component when automotive reliability is mandatory. The dual P-channel structure simplifies bridge or high-side switching designs. Verify that the logic-level threshold suits your control voltage. Consider thermal derating factors for ambient temperatures exceeding 25°C.
Part Context
This device belongs to the HEXFET family utilizing advanced planar technology. It is designed specifically for automotive environments demanding high reliability. The dual configuration integrates two independent P-channel MOSFETs into a single compact package.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Generic replacements may not meet AEC-Q101 automotive qualification standards. Verify pinout compatibility before implementation.
FAQ
Is the AUIRF7304QTR suitable for harsh automotive environments?
Yes, it is qualified according to AEC-Q101 standards for automotive applications.
What is the maximum operating junction temperature?
The maximum operating junction temperature is +150°C.
Does the device support logic level driving?
Yes, the device features logic level gate drive capability.
