AUIRF7309Q

Overview

The AUIRF7309Q is an automotive-grade dual HEXFET power MOSFET in an SO-8 package, integrating N-channel and P-channel devices. It features a 30V drain-source breakdown voltage (VDSS) with a maximum on-resistance (RDS(on)) of 0.05Ω for the N-channel at VGS=10V and 0.10Ω for the P-channel at VGS=-10V. Continuous drain currents are 4.0A (N-Ch) and -3.0A (P-Ch) at TA=25°C. The device supports a junction temperature up to 150°C, operates with logic-level gate drive, and includes dynamic dv/dt ratings for ruggedized performance.

Feature Summary

• Dual N-channel and P-channel configuration within a single compact SO-8 package
• Automotive qualification compliant with AEC-Q101 standards
• Advanced planar technology enabling low on-resistance per silicon area
• Logic level gate drive capability for efficient control

Applications

• Automotive cellular systems
• Low-side and high-side switching applications
• Power management circuits requiring dual polarity control

Procurement Notes

Verify the specific ordering suffix when purchasing. The base part number AUIRF7309Q corresponds to the standard tape and reel form factor containing 4000 units. Confirm that the received components match the SO-8 package outline and pinout diagram provided in the datasheet to ensure compatibility with your PCB footprint and assembly process.

Selection Notes

Select this component for designs requiring integrated N and P channel switching in a small footprint. Ensure the thermal design accounts for the junction-to-ambient resistance of 90°C/W under steady-state conditions. Verify that the gate drive voltage meets the logic level requirements for optimal RDS(on) performance and check that the continuous current demands do not exceed the rated limits at the expected ambient temperature.

Part Context

This device belongs to Infineon's HEXFET family of power MOSFETs, specifically engineered for automotive reliability. It utilizes advanced processing techniques to minimize on-resistance while maintaining fast switching speeds. The dual-channel design simplifies circuit topology by combining complementary switches into one component, reducing board space and assembly complexity compared to discrete solutions.

Replacement Considerations

No public confirmed substitute part numbers are listed in the documentation. Engineers should verify pin compatibility and electrical parameters before considering alternative manufacturers or different part numbers from the same supplier.

FAQ

What is the peak diode recovery dv/dt rating for the internal body diodes?

The N-channel has a peak diode recovery dv/dt rating of 6.9 V/ns, while the P-channel is rated at 6.0 V/ns.

Is the AUIRF7309Q suitable for high-temperature automotive environments?

Yes, the device is qualified for automotive applications and supports an operating junction temperature range up to 150°C.

What is the total gate charge (Qg) for the N-channel device?

The total gate charge for the N-channel is typically 25 nC under test conditions of ID = 2.6A, VDS = 16V, and VGS = 4.5V.