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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6.9A 8SOIC
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.9A
- Rds On (Max) @ Id, Vgs：29mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：755pF @ 25V
- Power - Max：2.4W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AUIRF7313Q is an automotive-grade dual N-channel HEXFET power MOSFET in an SO-8 package. It features a drain-source voltage of 30V and a continuous drain current of 6.9A at 25°C, with a maximum on-resistance of 29mΩ at VGS=10V. The device supports logic-level gate drive, operates up to 175°C, and includes avalanche energy ratings of 450mJ.
Feature Summary
- Automotive qualified per AEC-Q101 standards
- Dual N-channel configuration with low on-resistance
- Logic level gate drive capability
- Fast switching speed with ruggedized design
Applications
- Automotive electronic systems
- Cellular phone applications
- General purpose power switching
Procurement Notes
Verify the specific suffix (e.g., TR for tape and reel) against the required packaging format. Confirm that the component meets the intended application's thermal and electrical requirements by reviewing the Safe Operating Area curves. Ensure compliance with RoHS directives and check for any obsolescence notices from Infineon Technologies before finalizing procurement plans.
Selection Notes
Select this component when a dual N-channel MOSFET with automotive qualification is required. Consider the 30V rating and 6.9A current capacity relative to the load. Evaluate the 29mΩ on-resistance for conduction losses and verify that the logic-level gate drive matches the control circuit voltage levels.
Part Context
This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes advanced planar technology to achieve low on-resistance per silicon area. The device is designed for high reliability and efficiency in demanding environments, specifically targeting automotive and mobile communication applications.
Replacement Considerations
Check for direct cross-references within the Infineon portfolio. Verify pinout compatibility and electrical parameters such as RDS(on), VDS, and package dimensions before substituting with other dual N-channel MOSFETs.
FAQ
Is the AUIRF7313Q suitable for automotive applications?
Yes, the AUIRF7313Q is specifically designed for automotive applications and has passed AEC-Q101 qualification.
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175°C.
Does the device support logic-level gate drive?
Yes, the AUIRF7313Q features logic-level gate drive capability.
