AUIRF7313QTR

Description：MOSFET 2N-CH 30V 6.9A 8SOIC
Series：HEXFET®

SKU:2e0df0eaa597 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 6.9A 8SOIC
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6.9A
Rds On (Max) @ Id, Vgs：29mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：755pF @ 25V
Power - Max：2.4W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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AUIRF7313QTR

Overview

The AUIRF7313QTR is an automotive-grade dual N-channel HEXFET power MOSFET in an SO-8 package. It features a maximum drain-source voltage of 30 V and a continuous drain current of 6.9 A at 25°C. The typical on-resistance is 23 mΩ, with a maximum of 29 mΩ at 10 V gate drive. Total gate charge is typically 22 nC. It supports a junction temperature up to 175°C and includes avalanche energy ratings.

Feature Summary

Automotive qualified per AEC-Q101 standards for high reliability
Logic level gate drive capability for efficient control
Fast switching speed with ruggedized device design
Advanced planar technology for low on-resistance

Applications

Automotive power management systems
Motor control applications
High-side and low-side switching circuits

Procurement Notes

Verify the specific suffix 'TR' indicates tape and reel packaging containing 4000 units. Confirm the component meets AEC-Q101 qualification requirements for your target automotive application. Ensure thermal management aligns with the specified junction-to-ambient resistance limits under operating conditions.

Selection Notes

Select this component when a dual N-channel configuration is required within a compact SO-8 footprint. It is suitable for applications demanding logic-level gate drive compatibility and robust performance in automotive environments. Consider the 30V rating and 6.9A current capacity against system load requirements.

Part Context

This part belongs to Infineon's HEXFET family, utilizing advanced planar technology. It is specifically engineered for automotive applications, offering a balance of low on-resistance and fast switching speeds. The dual channel design allows for integrated circuit solutions in space-constrained modules.

Replacement Considerations

Check for direct equivalents such as IRF7313 or AUIRF7316Q if pinout and electrical parameters match. Verify that any substitute maintains the same SO-8 package dimensions and automotive qualification status to ensure mechanical and reliability compatibility.