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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 8SOIC
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：58mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：710pF @ 25V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AUIRF7316QTR is an automotive-grade dual P-channel MOSFET from Infineon Technologies, utilizing HEXFET technology. It features a 30V drain-source voltage rating and a continuous drain current of 4.9A. The device offers a low on-resistance of 42mΩ at Vgs=-10V. Packaged in SOIC-8 for surface mount applications, it supports a junction temperature up to 175°C and operates within a -55°C to 175°C range. Key electrical characteristics include a gate charge of 23nC and power dissipation of 2W.
Feature Summary
- Automotive qualification compliant with AEC-Q101 standards for reliability
- Dual independent P-channel configuration in a compact SOIC-8 package
- HEXFET technology optimized for low on-resistance and fast switching
- Extended thermal performance supporting high junction temperatures
Applications
- Automotive load switching applications
- Power distribution units in vehicles
- Motor control circuits
- High-side switching solutions
Procurement Notes
Verify the specific suffix 'TR' indicates tape and reel packaging when sourcing. Confirm the component meets current AEC-Q101 automotive reliability requirements for your target application environment. Check for obsolescence status as automotive components may have limited lifecycle availability. Ensure compatibility with your assembly process regarding the SOIC-8 package type.
Selection Notes
Select this component for designs requiring dual P-channel switching with automotive durability. Compare on-resistance and gate charge against alternatives to optimize efficiency. Consider the SOIC-8 footprint constraints and thermal management needs for the 2W dissipation rating. Validate that the 30V voltage rating provides sufficient margin for your system's operating conditions.
Part Context
This part belongs to Infineon's automotive MOSFET portfolio, designed for robust performance in harsh environments. The HEXFET platform emphasizes low loss and high speed. The 'AU' prefix typically denotes automotive qualification, distinguishing it from standard industrial variants. It serves as a discrete solution for power management in vehicle electronics.
Replacement Considerations
Check for direct pin-compatible replacements within the same HEXFET family. Verify if updated generations offer improved thermal or electrical metrics. Ensure any substitute maintains the required automotive certification level.
