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Product Detailed Parameters
- Description：MOSFET 2N-CH 55V 5.1A 8SOIC
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：55V
- Current - Continuous Drain (Id) @ 25°C：5.1A
- Rds On (Max) @ Id, Vgs：50mOhm @ 5.1A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：780pF @ 25V
- Power - Max：2.4W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AUIRF7341Q is an automotive-qualified dual N-channel HEXFET Power MOSFET in a surface-mount SO-8 package. It features a maximum drain-source voltage of 55 V and a continuous drain current of 5.1 A at 25°C. The device exhibits a typical on-resistance of 0.043 Ω at VGS=10V, with a maximum of 0.050 Ω. It supports a junction temperature range from -55°C to +175°C and includes enhanced avalanche ratings.
Feature Summary
- Automotive qualification per AEC-Q101 standards
- Dual N-channel configuration in a compact SO-8 package
- Logic level gate drive capability for efficient control
- Enhanced repetitive avalanche rating for robust operation
Applications
- Automotive power distribution systems
- High-side and low-side switching applications
- Motor control circuits
- General purpose power management in vehicles
Procurement Notes
Verify the specific suffix (e.g., QTR) when ordering tape and reel quantities. Confirm that the component meets the required AEC-Q101 qualification level for your specific automotive application. Ensure thermal design accounts for the 62.5 °C/W junction-to-ambient resistance under standard board-mounted conditions.
Selection Notes
Select this component for designs requiring dual isolated channels within a small footprint. The logic-level gate drive simplifies driver circuit requirements. Consider the 175°C operating temperature for high-thermal environments. Evaluate the avalanche energy limits if inductive loads are present.
Part Context
This part belongs to Infineon's HEXFET family, utilizing advanced planar technology to minimize on-resistance. The SO-8 package provides enhanced thermal characteristics compared to smaller alternatives. It is designed specifically to meet the rigorous reliability demands of the automotive industry.
Replacement Considerations
Check pinout compatibility and electrical parameters against existing designs. Verify that any substitute also holds automotive qualification if required. Ensure the replacement package matches the SO-8 form factor for PCB integration.
FAQ
What is the maximum junction temperature?
The maximum operating junction temperature is +175°C.
Is this component suitable for automotive use?
Yes, it is qualified according to AEC-Q101 standards.
What is the typical total gate charge?
The typical total gate charge is 29 nC at VGS=10V.
