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Product Detailed Parameters
- Description：MOSFET 2N-CH 55V 5.1A 8SOIC
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：55V
- Current - Continuous Drain (Id) @ 25°C：5.1A
- Rds On (Max) @ Id, Vgs：50mOhm @ 5.1A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：780pF @ 25V
- Power - Max：2.4W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The AUIRF7341QTR is an automotive-qualified dual N-channel HEXFET Power MOSFET in a surface-mount SO-8 package. It features a maximum drain-source voltage of 55 V and a continuous drain current of 5.1 A at 25°C. The device achieves an ultra-low on-resistance with a typical value of 0.043 Ω and a maximum of 0.050 Ω at VGS = 10V. Designed for high efficiency, it supports a junction temperature up to 175°C and includes fast switching capabilities.
Feature Summary
- Automotive qualified according to AEC-Q101 standards
- Dual N-channel configuration within a single SO-8 package
- Logic level gate drive capability for efficient control
- Enhanced thermal performance with 175°C operating temperature
Applications
- Automotive power management systems
- High-efficiency DC-DC converters
- Motor control applications
Procurement Notes
Verify the specific suffix 'TR' indicates tape and reel packaging when ordering. Confirm that the component meets AEC-Q101 requirements if automotive qualification is mandatory for the design. Ensure the selected package type aligns with the PCB footprint specifications provided in the datasheet.
Selection Notes
Select this component for designs requiring dual isolated channels in a compact form factor. Consider the low on-resistance for minimizing conduction losses in power paths. Evaluate the thermal resistance characteristics against the expected ambient conditions to ensure reliable operation within the specified temperature range.
Part Context
This part belongs to Infineon's HEXFET family, known for advanced planar technology. The AUIRF7341Q variant specifically targets automotive markets, offering improved reliability compared to standard industrial grades. It utilizes the same silicon die as the IRF7341 but undergoes stricter qualification processes.
Replacement Considerations
The base part number AUIRF7341Q serves as the direct functional equivalent. Verify pinout compatibility before substituting with other dual MOSFET packages.
FAQ
What is the maximum junction temperature for this component?
The maximum operating junction temperature is 175°C.
Is this component suitable for automotive applications?
Yes, it is qualified according to the AEC-Q101 standard for automotive use.
How many MOSFET channels are contained in one package?
The package contains two independent N-channel MOSFETs.
