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The AUIRF7342QTR is an automotive-grade, dual P-channel isolated enhancement-mode MOSFET from the Infineon HEXFET series. It features a maximum drain-source voltage of 55 V and a continuous drain current of 3.4 A. The device utilizes a surface-mount SOIC-8 package with two independent channels. Key electrical parameters include a maximum on-resistance of 170 mΩ, a typical gate charge of 26 nC at specified voltages, and a forward voltage of -1.2 V. It operates within a temperature range of -55°C to 150°C with a power dissipation of 2 W.
Verify the specific suffix 'QTR' indicates tape-and-reel packaging configuration when sourcing. Confirm that the component meets the required automotive grade specifications for your target application environment. Ensure compatibility with existing PCB footprints designed for SOIC-8 packages. Check for any recent lifecycle status updates regarding availability or obsolescence directly from Infineon official channels before finalizing procurement plans.
Select this component when dual isolated P-channel switching is required in automotive contexts. The 55 V rating suits standard 12 V automotive systems with transient protection needs. Consider the 170 mΩ on-resistance for thermal management calculations. Verify that the 3.4 A current capability aligns with the maximum load requirements of the intended circuit design without exceeding safe operating area limits.
This part belongs to the Infineon HEXFET family, known for power MOSFET solutions. The 'AU' prefix typically denotes automotive qualification, while 'IRF7342' identifies the base dual P-channel device specification. The 'QTR' suffix specifies the reel packaging format for automated assembly processes.
Publicly confirmed substitute part numbers are not available in the provided source data. Consult Infineon official documentation for qualified alternatives if this specific part number becomes unavailable.