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Product Detailed Parameters
- Description：MOSFET N/P-CH 55V 4.7A 8SOIC
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：55V
- Current - Continuous Drain (Id) @ 25°C：4.7A, 3.4A
- Rds On (Max) @ Id, Vgs：50mOhm @ 4.7A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：740pF @ 25V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AUIRF7343QTR is an automotive-grade dual HEXFET Power MOSFET in a surface-mount SO-8 package, integrating one N-channel and one P-channel device. It features a maximum drain-source voltage of ±55 V and continuous drain currents of 4.7 A (N-channel) and -3.4 A (P-channel). The typical on-resistance is 0.043 Ω for the N-channel and 0.095 Ω for the P-channel at 10 V gate drive. Operating junction temperature ranges from -55 °C to +150 °C with a maximum power dissipation of 2.0 W.
Feature Summary
- Automotive qualified per AEC-Q101 standards
- Advanced planar technology for ultra-low on-resistance
- Logic level gate drive capability
- Dual N and P channel configuration in SO-8
Applications
- Automotive power management circuits
- Motor control applications
- High-side and low-side switching
Procurement Notes
Verify the component matches the exact Infineon part number AUIRF7343QTR. Confirm the package type is SO-8 and the reel quantity is 4000 units. Ensure the supplier provides traceability documentation confirming AEC-Q101 qualification status. Check for RoHS compliance markings on the packaging.
Selection Notes
Select this component when designing automotive systems requiring a compact dual N/P MOSFET solution. The logic-level gate drive simplifies driver circuit design. Evaluate thermal performance against the 62.5 °C/W junction-to-ambient resistance limit. Consider the avalanche energy ratings for inductive load protection requirements.
Part Context
This component belongs to Infineon's HEXFET family, utilizing advanced planar technology to achieve high efficiency in a small footprint. The SO-8 package offers enhanced thermal characteristics compared to traditional through-hole options. It is designed specifically for robust operation in demanding automotive environments.
Replacement Considerations
AUIRF7343Q is the base lead-free version of this component.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is +150 °C.
Is this component suitable for automotive applications?
Yes, it is specifically designed for automotive applications and is qualified according to AEC-Q101 standards.
What is the total gate charge for the N-channel?
The typical total gate charge for the N-channel is 24 nC.
