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The AUIRF7379Q is an automotive-grade dual HEXFET power MOSFET in a surface-mount SO-8 package. It integrates one N-channel and one P-channel enhancement-mode transistor. The N-channel device supports a drain-source voltage of 30 V, with a maximum on-resistance of 0.045 Ω at 10 V gate drive and a continuous current rating of 5.8 A. The P-channel counterpart provides -30 V breakdown, a maximum on-resistance of 0.090 Ω at -10 V, and a continuous current of -4.3 A. Both channels operate up to a junction temperature of 150 °C.
Verify the specific ordering suffix required for your production volume. The standard tube packaging corresponds to the base part number, while tape and reel options are available under the TR suffix. Confirm that the component meets the exact electrical parameters needed for your design before finalizing procurement orders.
Select this component when a compact dual solution combining both polarities is required for automotive environments. Ensure the thermal design accommodates the junction-to-ambient resistance of 50 °C/W. Verify that the logic level gate drive threshold aligns with your system's control voltage levels for optimal switching performance.
This device belongs to Infineon's HEXFET family, utilizing advanced planar processing techniques. It is specifically engineered for automotive applications requiring robust performance and efficiency. The dual configuration allows for space-saving designs in power electronics where both N-type and P-type switching are necessary.
Direct replacements must match the 30V rating, SO-8 package, and dual N/P configuration. Verify that any substitute meets AEC-Q101 automotive qualification requirements and maintains comparable on-resistance and thermal characteristics.