AUIRF7379Q

AUIRF7379Q

  • Description:MOSFET N/P-CH 30V 5.8A 8SOIC
  • Series:HEXFET®

SKU:344105b5603b Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N/P-CH 30V 5.8A 8SOIC
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:5.8A, 4.3A
  • Rds On (Max) @ Id, Vgs:45mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:520pF @ 25V
  • Power - Max:2.5W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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AUIRF7379Q

Overview

The AUIRF7379Q is an automotive-grade dual HEXFET power MOSFET in a surface-mount SO-8 package. It integrates one N-channel and one P-channel enhancement-mode transistor. The N-channel device supports a drain-source voltage of 30 V, with a maximum on-resistance of 0.045 Ω at 10 V gate drive and a continuous current rating of 5.8 A. The P-channel counterpart provides -30 V breakdown, a maximum on-resistance of 0.090 Ω at -10 V, and a continuous current of -4.3 A. Both channels operate up to a junction temperature of 150 °C.

Feature Summary

  • Automotive qualification per AEC-Q101 standards for high reliability
  • Advanced planar technology achieving low on-resistance per silicon area
  • Logic level gate drive capability for efficient control
  • Dual N and P channel configuration within a single compact package

Applications

  • Automotive power management circuits
  • Motor control applications
  • High-side and low-side switching configurations

Procurement Notes

Verify the specific ordering suffix required for your production volume. The standard tube packaging corresponds to the base part number, while tape and reel options are available under the TR suffix. Confirm that the component meets the exact electrical parameters needed for your design before finalizing procurement orders.

Selection Notes

Select this component when a compact dual solution combining both polarities is required for automotive environments. Ensure the thermal design accommodates the junction-to-ambient resistance of 50 °C/W. Verify that the logic level gate drive threshold aligns with your system's control voltage levels for optimal switching performance.

Part Context

This device belongs to Infineon's HEXFET family, utilizing advanced planar processing techniques. It is specifically engineered for automotive applications requiring robust performance and efficiency. The dual configuration allows for space-saving designs in power electronics where both N-type and P-type switching are necessary.

Replacement Considerations

Direct replacements must match the 30V rating, SO-8 package, and dual N/P configuration. Verify that any substitute meets AEC-Q101 automotive qualification requirements and maintains comparable on-resistance and thermal characteristics.

AUIRF7379QAUIRF7379Q

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