ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 3.5A/2.3A 8SO
- Series：HEXFET®
- Mfr：International Rectifier
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.5A, 2.3A
- Rds On (Max) @ Id, Vgs：100mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：190pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
Download product information
Overview
The AUIRF9952QTR is an automotive-grade dual N-channel and P-channel HEXFET power MOSFET array in an SO-8 package. It features a drain-source voltage of 30V for the N-channel and -30V for the P-channel, with continuous drain currents of 3.5A and -2.3A respectively at 25°C. The maximum on-resistance is 0.10Ω for the N-channel and 0.25Ω for the P-channel at VGS=10V. Designed for logic-level gate drive, it supports up to 150°C junction temperature and includes full avalanche rating capabilities.
Feature Summary
- Automotive qualified under AEC-Q101 standards
- Advanced planar technology for low on-resistance
- Logic level gate drive capability
- Full avalanche rated with repetitive avalanche allowed
Applications
- Automotive cellular design applications
- Low resistance switching circuits
- High reliability automotive electronics
Procurement Notes
Verify component authenticity through authorized Infineon distributors or certified suppliers. Confirm the part number matches the exact suffix QTR for tape and reel packaging. Check for RoHS compliance status and ensure storage conditions adhere to moisture sensitivity level 1 requirements before assembly.
Selection Notes
Select this component when designing automotive systems requiring integrated N and P channel switching in a compact surface mount footprint. Consider its logic level gate drive feature for direct microcontroller interfacing without additional level shifting circuitry. Evaluate thermal performance based on the specified junction-to-ambient thermal resistance for your specific PCB layout.
Part Context
This device belongs to the HEXFET family from International Rectifier, now part of Infineon Technologies. It utilizes advanced processing techniques to achieve high efficiency and ruggedness. The product line is specifically engineered to meet the stringent reliability and performance demands of modern automotive electronic control units and power management systems.
Replacement Considerations
Consult official Infineon documentation for verified cross-reference part numbers. Ensure any substitute maintains identical pinout configuration, voltage ratings, and current handling capabilities. Verify that replacement components also meet AEC-Q101 automotive qualification standards if used in safety-critical applications.
