AUIRFP4110

$3.49

Description：MOSFET N-CH 100V 120A TO247AC
Series：HEXFET®
Mfr：International Rectifier
Package：Bulk

SKU:4eedc4bb1984 Category: Single FETs, MOSFETs Brand: International Rectifier

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Product introduction

AUIRFP4110 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is MOSFET N-CH 100V 120A TO247AC. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFP4110

Description：MOSFET N-CH 100V 120A TO247AC
Series：HEXFET®
Mfr：International Rectifier
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：210 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：9620 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：370W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247AC
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for AUIRFP4110

AUIRFP4110

Single FETs, MOSFETs Overview

The AUIRFP4110 is an N-channel HEXFET power MOSFET designed for automotive applications. It features a TO-247AC package with a maximum drain-source voltage of 100 V and a continuous drain current of 120 A at 25°C (package limited). The device offers a maximum on-resistance of 4.5 mΩ at VGS = 10V, enabling high efficiency. It supports a junction temperature up to 175°C and includes repetitive avalanche capability. Key electrical parameters include a total gate charge of 150 nC typical and a peak diode recovery dv/dt of 5.3 V/ns.

Single FETs, MOSFETs Feature Summary

Advanced process technology achieving ultra-low on-resistance per silicon area
Enhanced dV/dt and dI/dt capabilities for improved switching performance
Repetitive avalanche rating allowed up to the maximum junction temperature
Automotive qualified according to AEC-Q101 standards

Single FETs, MOSFETs Applications

Automotive power management systems
High-efficiency motor control circuits
DC-DC converter topologies requiring low conduction losses

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and quantity. Ensure that the component meets the required automotive qualification standards for the intended application environment. Cross-reference the datasheet revision history to confirm the accuracy of the provided electrical specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust automotive-grade reliability and high thermal stability. The TO-247AC package facilitates effective heat dissipation for high-current applications. Consider the 175°C operating limit and repetitive avalanche ratings for designs subject to inductive load switching or transient voltage events.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon HEXFET family of power MOSFETs. It utilizes advanced processing techniques to minimize resistance while maintaining high voltage blocking capabilities. The device is specifically engineered to meet the stringent requirements of the automotive industry, offering a balance of low conduction loss and high switching speed.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's official replacement guide for verified substitute part numbers. Do not assume functional equivalence based solely on pinout compatibility without verifying electrical parameter alignment.