AUIRFR4292

Single FETs, MOSFETs Overview

The AUIRFR4292 is an automotive-grade N-channel HEXFET power MOSFET designed for high-efficiency switching applications. It features a 250V drain-source breakdown voltage and a typical on-resistance of 275mΩ at VGS=10V, with a maximum rating of 345mΩ. The device supports a continuous drain current of 9.3A at 25°C case temperature and handles pulsed currents up to 40A. Operating within a junction temperature range of -55°C to +175°C, it offers fast switching characteristics including a turn-on delay of 11ns and fall time of 8.4ns. Total gate charge is typically 13nC.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 standards for reliability in vehicle environments
• Advanced process technology enables low on-resistance per silicon area
• Supports repetitive avalanche operation up to maximum junction temperature
• Fast switching speed combined with improved thermal performance

Single FETs, MOSFETs Applications

• Automotive power management systems
• High-side and low-side load switches
• DC-DC converter circuits
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix (e.g., TRL or TRR) against the required packaging format, as standard tube options may be discontinued. Confirm that the component meets the necessary AEC-Q101 qualification level for your specific automotive application requirements before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a 250V rating is required alongside low conduction losses in a D-Pak package. Ensure the design accounts for the linear derating factor of 0.67 W/°C above 25°C case temperature. Verify that the gate drive voltage aligns with the specified 10V threshold for optimal RDS(on) performance.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family of power MOSFETs, specifically tailored for automotive durability. It utilizes advanced processing techniques to minimize resistance while maintaining robust thermal capabilities. The device is distinct from consumer-grade counterparts by its extended temperature range and rigorous qualification standards.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage class if availability is constrained. Ensure any substitute maintains the required 250V rating and similar gate charge characteristics to preserve switching performance in existing circuit designs.