AUIRFR5505

Description：MOSFET P-CH 55V 18A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:24b4172d389e Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFR5505 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 55V 18A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFR5505

Description：MOSFET P-CH 55V 18A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：110mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：32 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：650 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：57W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFR5505

AUIRFR5505

Single FETs, MOSFETs Overview

The AUIRFR5505 is an automotive-grade P-channel HEXFET power MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage of -55V and a continuous drain current of -18A at 25°C case temperature. The device achieves a maximum on-resistance of 0.11Ω at VGS = -10V, ensuring low conduction losses. Key electrical parameters include a total gate charge of 32nC, a single-pulse avalanche energy rating of 150mJ, and a peak diode recovery dv/dt rating of -5.0 V/ns. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards with extended industrial and consumer qualification levels.
Advanced planar technology provides ultra-low on-resistance per silicon area for improved efficiency.
Fully avalanche rated with repetitive avalanche capability allowed up to the maximum junction temperature.
Fast switching characteristics combined with ruggedized device design for reliable operation.

Single FETs, MOSFETs Applications

Automotive power management systems
High-side load switches
Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify that the specific orderable part number matches the required package type (D-Pak or I-Pak) and packaging format (Tube or Tape & Reel). Confirm compliance with RoHS directives and ensure the component meets the necessary AEC-Q101 qualification requirements for the intended automotive application environment.

Single FETs, MOSFETs Selection Notes

Select this component when automotive reliability and ruggedness are primary requirements. The device is suitable for applications demanding high pulse current handling and avalanche robustness. Consider the thermal resistance and power dissipation limits relative to the expected operating conditions and PCB mounting configuration.

Single FETs, MOSFETs Part Context

This component belongs to the Infineon HEXFET family, utilizing advanced processing techniques to minimize on-resistance. The 'AU' prefix indicates automotive grade qualification. The base model supports both surface mount D-Pak and through-hole I-Pak configurations, providing flexibility in board layout and assembly processes.